QI/ a- Using the characteristics of Figure below, determine Ip, Vp, VR for the following circuit: + Vp Si E 12 V R20.75 k2 VR b- Repeat part (a) using the approximate model for the diode. c- Repeat part (a) using the ideal model for the diode. p(mA) 30 25 20 15 10 11 12 Vp (V) 0.7 V

QI/ a- Using the characteristics of Figure below, determine Ip, Vp, VR for the following circuit: + Vp Si E 12 V R20.75 k2 VR b- Repeat part (a) using the approximate model for the diode. c- Repeat part (a) using the ideal model for the diode. p(mA) 30 25 20 15 10 11 12 Vp (V) 0.7 V

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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Question

Q1/ a- Using the characteristics of Figure below, determine Ip, Vp, VR for the
following circuit:
+ Vp
Si
+
E
12 V
R20.75 k2 VR
b- Repeat part (a) using the approximate model for the diode.
c- Repeat part (a) using the ideal model for the diode.
(mA)
30
25
20
15
10
10
11
12 Vp (V)
0,7 V

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