Solve the voltage across silicon diode of the given circuit below. 32 V ID1 ID2 0.7 V 0.3 V 32 V 28 V Ge Si 6.8 kohms 6 4 V • Vo
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- Hello, can someone help explain this to me? TIA.. Calculate Vbi in a silicon pn junction for Nd = 1014 cm-3and Na = 1016 at 310K.Silicon BJT (β=120) and Germanium BJT (β=120) VCE in circuitCalculate its value. Comment the circuitThe concentration of donor impurity atoms in silicon is Nd = 1015 cm-3. Assume an electron mobility of u, = 1300 cm?/V-s and a hole mobility of u, = 450 cm2/V-s. (a) Calculate the resistivity of the material. (b) What is the conductivity of the material?
- what is the schemtic diagram of TP4056 and Li-ion battery when they connect to each other. The picture given belowTypically given as IDSS = 10 mA and VGS(off) = -8 V for a JFET. Using these values, determine the drain current for VGS = -2 V.A diode has wdo = 1.5 μm and φj = 0.8 V. (a) What is the depletion layer width for VR =5V? (b) For VD = −10 V?
- Which of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? Si diodes have lower PIV and wider temperature ranges than Ge diodes. Ge diodes have lower PIV and smaller temperature ranges than Si diodes. Si diodes have higher PIV and narrower temperature ranges than Ge diodes. Si diodes have lower PIV and narrower temperature ranges than Ge diodes.The output of a diode used as a solar cell is given by IC =1−10−15[exp(40VC)−1] amperes What operating point corresponds to Pmax? What is Pmax? What are the values of ISC and VOC?Since , C= 47 micro farad, RL= 1Kohm, Vs= 90cos2000t V What is the diode current in the one-time fill time range of the capacity?