The circuit given uses a particular transistor which has B 80 when used in Forward Active Mode andhas Vce (SAT) = 0.2V when in the saturation.Assume Vag = 10V, and using all information above, find the closest value of forced betaBrorced-+10 VRc-4 k2Rg-220 k20.7 VQ Zoom image3465775258zenor

Answered: Image /qna-images/answer/a6202c61-04ea-4277-8ca7-e7ec6497f848.jpg

The circuit given uses a particular transistor which has B = 80 when used in Forward Active Mode and has Vce (SAT) = 0.2V when in the saturation. Assume Van = 10V, and using all information above, find the closest value of forced beta Brorced- Rc=4 k2 R-220 k2 VCE 0.7 V Q Zoom image 34 65 77 52 58 zenor

The circuit given uses a particular transistor which has B = 80 when used in Forward Active Mode and has Vce (SAT) = 0.2V when in the saturation. Assume Van = 10V, and using all information above, find the closest value of forced beta Brorced- Rc=4 k2 R-220 k2 VCE 0.7 V Q Zoom image 34 65 77 52 58 zenor

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Plot the transfer characteristics curve and bias line of the circuit below.What isthe value of VGSq? VDD=25V , R1=15M, R2=12M RD= 3.2k , RS=1.5k
NPN BJTs can be used as emitter followers. In the given circuit, the emitter follower is connected to a non-ideal voltage source (Vs) with a source resistance (Rs). Beta is 100, Vce,sat is 0V, and Vbe is 0.7V. 1. What is Vo if Vs = 3V and Rs = 5k ohms? 2. What is Vo if Vs = 3V and Rs = 0 ohms?
In the circuit Vbe(on) = 0.7 V, Vce(sat) = 0.2 V and Beta-=200 Vcc = 9V Rc =1k and Rb = 10K a.) Calculate the max collector current ic. b.) If ib = 20 uA, what is ic? c) If ib = 20 uA, what is Vce? d.) If ib = 20 uA, is BJT in cutoff, active, or saturation?
Connect the elements given below as a BJT amplifier circuit with common emitter. BJT is BC547Bterminals from left to right are named collector, base and emitter respectively. 9V battery as VCC sourcewill be used. The audio signal obtained from the microphone will be connected to the circuit as the input signal. C0 at the outlet, CI at the inlet,CE is given as a bypass capacitor.
A. Design a fixed bias-transistor circuit using VBB = VCC = 10 V for a Q-point of IC = 5 mA and VCE_ 4 V. Assume βDC = 100.The design involves finding RB and RC. B. 4. Design an emitter bias network at Q-point ICQ = ½ ICsat and VCEQ = ½ VCC. Use VCC = 20 V, ICsat = 10 mA, β = 120, and RC = 4RE
for the follower circuit above, Rsig=2Kohm, R1=266Kohm, R2=115Kohm, Rc=5Kohm, R3=1.3Kohm, R6=4.2Kohm. if the transistor has gm=0.6mS and C3 is used for dominant pole design of lower corner frequency f=4KHz. determine the value of C3 in nF
5. Choose the correct answer: a) The reason of high input resistance of the MOSFET is: 1. The insulator layer. 2. The reverse biasing. 3. The forward biasing. b) Which transistor has no Ipss parameter?. 1. JFET. 2. E-MOSFET. 3. D-MOSFET. ¢) For an n-channel D-MOSFET transistor, at what condition can gm be greater than gmo?. 1. Vs is positive. 2. Vgs is negative. 3. Vas =0. d) A certain amplifier has an Rp=1KQ. When a load resistance of 1KQ is capacitively coupled to the drain, the gain will reduce to the: 1. Half. 2. Quarter. 3. Not change.
Given: Voltage Divider Bias Circuit Supply: 10Vdc to 24Vdc Load: 1000 ohms Voltage Gain: 80 to 400 Lower Cutt off Frequency: 100Hz Sinusoidal source (zero internal resistance): 50mVp-p Transistor: Si, beta=75 Base-Collector Capacitance= 8pF Base-Emitter Capacitance= 25pF Design a Single-stage Common Emitter Class A Amplifier and compute the following: a) dc load line b) hie c) midband gain d) Miller equivalent Capacitances e) upper cut off frequency
You are given a D-MOSFET biased at VGS=0V. The manufacturer's data sheet specifies IDSS=20mAand VGS(off) =-5V. What is the value of the drain current? ______
Connect the elements given below as a BJT amplifier circuit with common emitter. BJT is BC547B terminals from left to right are named collector, base and emitter respectively. 9V battery as VCC source will be used. The audio signal obtained from the microphone will be connected to the circuit as the input signal. C0 at the outlet, CI at the inlet, CE is given as a bypass capacitor.
The operating environment temperature of the base polarized circuit varies between 25 ᶛC and 50 ᶛC.The β value of the transistor is 100 at 25 ᶛC and 150 at 50 ᶛC. Under these conditions, the transistor QAnalyze the behavior (Ic and VCE) in the operating zone and determine the effect of temperature on the circuit.EXPLAIN.
The dc bias circuit for a common emitter amplifier is shown in the figure. In the circuit, Vcc=15v,RB1=20k Ω,RB2=100k Ω,Rc=5.1k Ω,and RE1=1k Ω, Assume that when the transistor is on, the voltage drop from base to emitter VBE=0.7v. Also assume that β= ∞, which implies that the base current can be considered zero (IB=0) in your calculations. Solve for the base voltage VB. Solve for the emitter voltage VE. Solve for the emitter current IB. Solve for the collector current IC