The diagram below is of a CE BJT potential divider bias circuit. The BJT parameters are : VBE(on) = 0.7 V, VCE(sat) = 0.3 V, and Bpc = 120. The circuit is biased so that the operating point is in the centre of the of the active region. Vcc = 18 V 7.2 mA Rc R1 10.8 V R2 RE 248 Ω WW

Introductory Circuit Analysis (13th Edition)
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Please help with the following questions : 

1) The DC operating point for the circuit in the form (IBQ, ICQ, VCEQ) ?

2) The magnitude of the collector resistor (RC) should be :

3) The maximum collector current (IC(max)), taking VCE(sat) as 0 V, is :

4) The power dissipated by the BJT is :

Thank you.

 

The diagram below is of a CE BJT potential divider bias circuit. The BJT parameters are :
VBE(on) = 0.7 V, VCE(sat) = 0.3 V, and Bpc = 120. The circuit is biased so that the operating
point is in the centre of the of the active region.
Vcc = 18 V
7.2 mA
Rc
R1
10.8 V
R2
RE
248 N
WW
wW
Transcribed Image Text:The diagram below is of a CE BJT potential divider bias circuit. The BJT parameters are : VBE(on) = 0.7 V, VCE(sat) = 0.3 V, and Bpc = 120. The circuit is biased so that the operating point is in the centre of the of the active region. Vcc = 18 V 7.2 mA Rc R1 10.8 V R2 RE 248 N WW wW
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