The diagram below is of a CE BJT potential divider bias circuit. The BJT parameters are : VBE(on) = 0.7 V, VCE(sat) = 0.3 V, and Bpc = 120. The circuit is biased so that the operating point is in the centre of the of the active region. Vcc = 18 V 7.2 mA Rc R1 10.8 V R2 RE 248 Ω WW
The diagram below is of a CE BJT potential divider bias circuit. The BJT parameters are : VBE(on) = 0.7 V, VCE(sat) = 0.3 V, and Bpc = 120. The circuit is biased so that the operating point is in the centre of the of the active region. Vcc = 18 V 7.2 mA Rc R1 10.8 V R2 RE 248 Ω WW
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Please help with the following questions :
1) The DC operating point for the circuit in the form (IBQ, ICQ, VCEQ) ?
2) The magnitude of the collector resistor (RC) should be :
3) The maximum collector current (IC(max)), taking VCE(sat) as 0 V, is :
4) The power dissipated by the BJT is :
Thank you.
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