Consider the circuit depicted in the figure shown below. This circuit is designed using a silicon bipolar junction transistor (BJT) with a forward currentgain BF = 100, and two resistances RB = 1kN and Rc = 1kN. The supply voltage is Vcc = 10 volts.The currents Ig and Ic designate the base and collector currents, respectively, whereas the voltage VCẸ denotes the voltage between collector andemitter.Vcc = 10 voltsRc =1 k2Rg = 1 k2VCEGNDThroughout this question, you will use VBE,on = 0.7 volt and VCE,sat = 0.2 volt.Recall that VBE.on is the threshold voltage of the base-emitter junction, while VCE.sat represents the voltage that is measured between collector andemitter when the BJT is saturated.a)What is the value of the base current In?Please enter the value expressed in milliamperes (mA) in the box below.For instance, if you think that IR = 0.1 A, enter 100 in the box. If you think that Ip = 10 mA, enter 10 in the box.mas-numbas-Iti.ncl.ac.ukSubmit partUnansweredb)What is the value of the collector current Ic?Please enter the value expressed in milliamperes (mA) in the box below.For instance, if you think that Ic = 0.1 A, enter 100 in the box. If you think that Ic = 10 mA, enter 10 in the box.Submit partUnansweredc)What is the value of the voltage VCE?Please enter the value expressed in volts (V) in the box below.For instance, if you think that VCE = 1 volt, enter 1 in the box. If you think that VCE = 10 mV, enter 0.01 in the box.Submit part

According to question: Checking whether the transistor is in saturation or not is done as…

Consider the circuit depicted in the figure shown below. This circuit is designed using a silicon bipolar junction transistor (BJT) with a forwar gain BF = 100, and two resistances RB = 1kN and Rc = 1kN. The supply voltage is Vcc = 10 volts. The currents Ig and Ic designate the base and collector currents, respectively, whereas the voltage VCg denotes the voltage between colle emitter. Vcc = 10 volts Rc =1 kN RB = 1 kN Vce GND Throughout this question, you will use VBE,on = 0.7 volt and VCE,sat = 0.2 volt.

Consider the circuit depicted in the figure shown below. This circuit is designed using a silicon bipolar junction transistor (BJT) with a forwar gain BF = 100, and two resistances RB = 1kN and Rc = 1kN. The supply voltage is Vcc = 10 volts. The currents Ig and Ic designate the base and collector currents, respectively, whereas the voltage VCg denotes the voltage between colle emitter. Vcc = 10 volts Rc =1 kN RB = 1 kN Vce GND Throughout this question, you will use VBE,on = 0.7 volt and VCE,sat = 0.2 volt.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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