The fig below shows the voltage divider bias method. Draw the d.c. load determine the operating point. Assume the transistor to be of silicon.
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- State four possible combinations of service equipment that meet the requirements of 110.9 and 110.10 of the Code. a. ______ b. ______ c. ______ d. ______a) Convert the following ( show all the steps): i. (1101 1100 1101 1101) 2 to ( ) 10 to ( )BCD to ( )8 ii. (64438) 10 to ( ) 16A transistor has a DC Beta of 280 and a base current, IB, of 25 micro Amperes. Find IE:7.868microA7.868mA2.8mA7.81mA Find IC:7.84microA7.84mA8mA8.4mA
- Hello! I just wanted to ask how did you get VT = 26m in the Emitter dynamic resistance in step 5? Also in step 6, is the KVL in Vi wrong? since Vi = -(IBR10k + IBBre) which makes Vo/Vi = (1k)(100) / -(86700+867) = -1.14 Av = -1.14Hoping for your response. Thank you!Make a wiring diagram of this given problem in 1st pictureee then for the 2nd pic it is the sample (Series circuit is the way we will need to use then make sure it has breakers, light bulbs, switch and lines *with dots*)Calculate the base current IB in uA when VCC=16V, VEE=-16V , RB=9205 ohm, RC=12529ohm, RE=11879ohm and B=192
- 6)Which of the following stands true for JFET breakdown situation? Drain current decreases only when VDS > VDSmax. Drain current increases only when VDS = VDSmax. Drain current increases only when VDS < VDSmax. Drain current increases only when VDS>VDSmax.Draw a 2x1 multiplexer block diagram.Create the status table. Find the simplest form of circuit output with Karnaugh.Explain the circuit problem that may occur.What should be done to fix the problem?(NEED A NEAT HANDWRITTEN SOLUTION ONLY OTHERWISE DOWNVOTE)In the circuit on the left, the specified voltage value has been measured. Find the IC, IB, IE and β values of the transistor. (| VBE | = 0.7 V)