The intrinsic carrier density at 300 K is 1.5x 10¹0 /cm³, in silicon. For n-type silicon doped to 2.25 x 10¹5 atoms/cm. Find the equilibrium electron and hole densities.
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- A silicon material is doped 2.25 x 10 ^ 15 atoms / cm ^ 3 with an element from the group 5a. At T = 300K, Ni = 1.5 x 10 ^ 10 cm ^ -3 is given for the silicon atom. Accordingly, which option has the correct electron and hole concentrations?Silicon is doped with an indium concentration of 8x10^19 / cm^3. Is indium a donor or acceptor impurity? Find the electron and hole concentrations, the electron and hole mobilities, and the resistivity of silicon material at 300K. Is this material n- or p-type?Compare the approximate radiative minority carrier lifetimes in gallium arsenide and silicon when the minority carriers are electrons injected into the p-type region which has a hole concentration of 10^18 cm−3. The injected electron density is small compared with the majority carrier density.
- An n-type semiconductor sample has an electron density of 6.25 x 10 ^ 18 / cm ^ 3 at 300K. If the concentration of the carriers in this example is 2.5 x 10 ^ 13 / cm ^ 3, what is the hole density at this temperature?An n-type semiconductor sample has an electron density of 6.25x10^18/cm^3 at 300K.If the additive-free concentration of the carriers is 2.5x10^13/cm^3, what is the hole density at this temperature?Estimate the amount of free electrons and holes in a N-doped Silicon wafer a) at room temperature with 1014 cm-3 doping level, and b) at 650K with 1015 cm-3 doping level
- The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differSilicon is doped with an indium concentration of 8×1019/cm3. Is indium a donor or acceptor impurity? Find the electron and hole concentrations, the electron and hole mobilities, and the resistivity of this silicon material at 300 K. Is this material n- or p-type?3. Consider a silicon with intrinsic carrier concentration ni of 1010 cm-3 at room temperature.It is then doped to p-type doping with a concentration of NA = 5x1017 cm-3. What is thelocation of the Fermi level relative to the conduction band? (Hint: NC = 2.8x1019 cm-3).
- A Silicon substrate is doped with donor impurities and the doping concentration is given by ND=2.25x1015/cm3. If the intrinsic carrier concentration at 300 K for Silicon is ni=1.5x1010/cm3, then find out equilibrium concentration of electrons and holes.A silicon sample at room temperature is doped with gallium (Ga) from one side such that Ndoping=38.85x1015e−x/α , α = 0.5 µm, and Ndoping >> ni. Calculate the electric field at x= 1µm.Hall measurement is conducted on a silicon sample of unknown doping with W= 100cm, A = 2.5 × 10-3cm2, I = 2 mA and the magnetic field is 500 Gauss. If the Hall voltage of +150mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity and mobility of the semiconductor sample.