The intrinsic conductivity of pure silicon at 20°C is 5x10-4 / m (very low) and the band-gap energy is 1.11 eV. At what temperature is the intrinsic conductivity 2000x higher than at room temperature? (a) (b) (c) (d) 1566K 448K 175K 273K
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- Calculate the conductivity of an intrinsic silicon at room temperature. If ten electrons out of 1010 electrons in Valence Band move to Conduction Band. Given the silicon density is (2.33×10 Kg/m³), the silicon atomie weight is (28.086), the electrons mobility is (0.15 m/V.sec.), and the holes mobility is (0.05 m2/V.sec.).For silicon at T = 300 K with donor density N_D = 1 * 10^9 cm^{-3} and acceptor density N_A = 0, calculate the equilibrium hole concentration in cm^{-3}. Values within 5% error will be considered correct.For silicon at T = 500 K with donor density N_D = 5* 10^{13} cm^ and acceptor density N_A = 0 calculate the equilibrium hole concentration in cm^{-3}. In this problem, you can assume the bandgap energy and effective masses are independent of temperature and use the room temperature values for them. Values within 5% error will be considered correct.
- For silicon at T = 300 K, calculate the equilibrium electron concentration in cm^{-3} if EC−EF=0.3eV. Values within 5% error will be considered correct.Determine the thermal-equilibrium concentrations of electrons and holes in silicon at T =300 K if the Fermi energy level is 0.2 eV above the valence-band energy. Assume that the bandgap of semiconductor is 1 eV. Nc=2x1019 cm-3 and Nv=1x1019 cm-3. Take kT=25.875 meVWhat mass of phosphorus is needed to dope 1.0 g of silicon so that the number density of conduction electrons in the silicon is increased by a multiply factor of 106 from the 10^16 m-3 in pure silicon.
- Calculate the holes concentration (in Tera electrons/m³) for the intrinsic silicon at (350°k). (Ne=2 ×10 23 /m³, Ny= N/2).Consider a n-type Si crystal at room temperature (300K) doped with 6 x1016 cm-3 arsenic impurity atoms and with certain number of shallowholes. Find out the equilibrium electron concentration, hole concentrationand Fermi level EF with respect to Ei, and the conduction band edge EC.For Si at 300K, the value of ni is 1.45 x 1010 cm-3 and k = 1.38 x 10-23 J/K,1eV = 1.60 x 10-19J. The band gap energy, Eg, of Si is 1.2eV.Solution:n @ Nd = 6 x 1016 cm-3.In equilibrium condition, hole concentration = 3.5 x 103 cm-3.EF – EI = 0.396eVEC – EF = 0.164eV.Calculate the density of thermionic emission current at Cs 500,1000,2000k° Question ,2 Copper have a mass density 8.95 g/cm^3 and n electrical resistivity of 1.55×10^-8ohm at room temperature. Assuming the effective mass is m0 ,calculate the conduction of electron ,the mean free time and the Fermi energy.
- Copper has mass density of 8.95 g/cm^2 and n electrical resistivity of 1.55 ×10^-8 ohm -m at room temperature. Assuming the effective mass is "mo " ,calcualte a, the concentration of the conduction electron . b,mean free time . c ,the Fermi energy.In an N-type semiconductor at T = 300 K, the electron concentration varies linearly from 2 x 10^18 to 5 X 10^17 per cc over a distance of 1.5 mm and the diffusion current density is 360 A/cm^2. Find the mobility of electrons.Inert concentration in germanium semiconductor material at T=400K(x10^14 per cm^3)?