The manufacturer of a selected diode gives the rate of fall of the diode current di/dt = 20A/µs, and a reverse recovery time of t₁=5 us. What value of peak reverse current do you expect?
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- What is the small-signal diode resistance rd at room temperature for ID = 1.5 mA? What is the small-signal resistance of this diode at T = 100◦C?Consider the diode circuit shown below. If in the given circuit, Vs is replaced by a 12V battery and diodes D1 & D2 are considered ideal, what is the potential Vout equal to?Consider the diode circuit shown below. If Vs is a sinewave with a peak amplitude of 12 Volts at 60Hz, and diodes D1 & D2 are considered ideal, sketch the appearance of the waveform at node voltage Vout . Sketch the appearance of the waveform at Vout .
- For a silicon pn junction under forward biased condition, the reverse saturation current is 10 nA. If the value of the forward voltage across the diode is 0.5 V and the observation is being made at 300 K, then what will be the value of the diode current?A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 ABriefly discuss the difference between Diode Piecewise-linear model, Simplified model, and Ideal device/ equivalent circuit. Study the diode specification sheets of a 1N4001 and 1N5401 diodes provided by the manufacturer and compare their difference. Give typical application of each. Discuss briefly how to test junction diode.
- Forward bias current equation given i If the =1 and Is= 10pA. Plot the I vs VD Forward bias characteristics of a PN Diode at room temperature by draw a graph and table of the graph. (b)Calculate and find Rd (details calculation)4. Plot the diode reverse characteristic, and estimate an approximate value for the reverse saturation current IS. From the results obtained in this experiment, compute the maximum power dissipated in the diode.A diode is doped with NA=1018/cm3 on the p-type side and ND=1018/cm3 on the n-type side. (a) What are the values of pp, pn, np, and nn? (b) What are the depletion-region width wdo and built-in voltage?
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