The maximum electric field in a reverse-biased semiconductor p-n junction at T-300K is to beJEmas=1x10' V/em. the doping concentrations are Np=Ix10 cm and NA=2x10 cm. Determine thereverse-bias voltage (in volt) that will produce this maximum electric field. Where n 2.1 x 10 cmand , E-12.9.

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The maximum electric field in a reverse-biased semiconductor p-n junction at T-300K is to be JEmax=1x10' V/cm. the doping concentrations are Np=1x10 cm and NA=2x10 cm. Determine the reverse-bias voltage (in volt) that will produce this maximum electric field. Where n = 2.1 x 10 cm and , E-12.9.

The maximum electric field in a reverse-biased semiconductor p-n junction at T-300K is to be JEmax=1x10' V/cm. the doping concentrations are Np=1x10 cm and NA=2x10 cm. Determine the reverse-bias voltage (in volt) that will produce this maximum electric field. Where n = 2.1 x 10 cm and , E-12.9.

Principles of Instrumental Analysis

7th Edition

ISBN:9781305577213

Author:Douglas A. Skoog, F. James Holler, Stanley R. Crouch

Publisher:Douglas A. Skoog, F. James Holler, Stanley R. Crouch

Chapter2: Electrical Components And Circuits

Section: Chapter Questions

Problem 2.10QAP

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Question

The maximum electric field in a reverse-biased semiconductor p-n junction at T-300K is to be
JEmas=1x10' V/em. the doping concentrations are Np=Ix10 cm and NA=2x10 cm. Determine the
reverse-bias voltage (in volt) that will produce this maximum electric field. Where n 2.1 x 10 cm
and , E-12.9.

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