The resistivity of an n-type extrinsic semiconductor is 0.25 N-m. If the electron mobility is 8.25 m²/V-s, then the concentration of donor atoms will be (in m³) (a) 3.0 x 1016 (c) 3.0 × 1018 (b) 3.0 × 1017 (d) 3.0 × 1019

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