To improve the semiconducting characteristics of GaAs, 1.31 x 10^15 atoms of Be are incorporated into the material. Be has an ionization energy of 0.6eV. What is the concentration/s of the majority and minority charge carrier?

To improve the semiconducting characteristics of GaAs, 1.31 x 10^15 atoms of Be are incorporated into the material. Be has an ionization energy of 0.6eV. What is the concentration/s of the majority and minority charge carrier?

Glencoe Physics: Principles and Problems, Student Edition

1st Edition

ISBN:9780078807213

Author:Paul W. Zitzewitz

Publisher:Paul W. Zitzewitz

Chapter29: Solid-state Electronics

Section29.1: Conduction In Solids

Problem 17PP

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To improve the semiconducting characteristics of GaAs, 1.31 x 10^15 atoms of Be are incorporated into the material. Be has an ionization energy of 0.6eV.

What is the concentration/s of the majority and minority charge carrier?

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