Using approximate method, the DC operating parameters of the BJT amplifier are as follows; Iro = 1.59mA and Y --1522 with D

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Using approximate method, the DC operating parameters of the BJT amplifier are as
follows: IEQ = 1.59mA and VCEQ = 15.22 with Rg1 = 180K Q, R52 =20K 2, RC=
2.2K Q, +Vcc +20 V, B of the Si transistor is 250 and ro =
%3D
%3D
%3D
infinity.
+Vc
RC
Io |
RB1
+ Vo(p-p)
10 uF
RB2
10 uF
0 uF
RE
The voltage gain and current gain of the transistor are
and
respectively.
0-2.63, +0.996
-2.63, +204.29
+134.56. +0.996
134,56+199
Transcribed Image Text:Using approximate method, the DC operating parameters of the BJT amplifier are as follows: IEQ = 1.59mA and VCEQ = 15.22 with Rg1 = 180K Q, R52 =20K 2, RC= 2.2K Q, +Vcc +20 V, B of the Si transistor is 250 and ro = %3D %3D %3D infinity. +Vc RC Io | RB1 + Vo(p-p) 10 uF RB2 10 uF 0 uF RE The voltage gain and current gain of the transistor are and respectively. 0-2.63, +0.996 -2.63, +204.29 +134.56. +0.996 134,56+199
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