Using approximate method, the DC operating parameters of the common collector BJT amplifier are as follows: IEQ = 1.585mA and VCEQ = 15.22 V with RB1 = 180KO, RB2 =20K 2, +Vcc = +20 V, B of the Si transistor is 250 and ro = infinity. Ce = 220uF RB1 RC VCC Ii C 20uF 10uF RB2 HE+ Vout Vin Co RE The voltage gain of the amplifier is equal to -2.63 O -134.12 +0.996 +0.98

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Using approximate method, the DC operating parameters of the common collector
BJT amplifier are as follows: IEQ = 1.585mA and VCEQ = 15.22 V with RB1 = 180KO,
RB2 =20K 2, +Vcc = +20 V, ß of the Si transistor is 250 and ro = infinity.
Ce = 220uF
RB1
RC
VCC
Ii
Ci- 20uF
10uF
RB2
HE+ Vout
Vin
Co
RE
The voltage gain of the amplifier is equal to
-2.63
O -134.12
+0.996
+0.98
Transcribed Image Text:Using approximate method, the DC operating parameters of the common collector BJT amplifier are as follows: IEQ = 1.585mA and VCEQ = 15.22 V with RB1 = 180KO, RB2 =20K 2, +Vcc = +20 V, ß of the Si transistor is 250 and ro = infinity. Ce = 220uF RB1 RC VCC Ii Ci- 20uF 10uF RB2 HE+ Vout Vin Co RE The voltage gain of the amplifier is equal to -2.63 O -134.12 +0.996 +0.98
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