Using diode equation, find the p-n junction diode current for a forward bias of 0.22V at room temperature 25°C with leakage current equal to 2mA. Take n=1
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- Suppose a drift current density of 5000 A/cm2 exists in the neutral region on the n-type side of a diode that has a resistivity of 0.5 Ω· cm. What is the electric field needed to support this drift current density?Suppose a drift current density of 2000 A/cm2 exists in the neutral region on the p-type side of a diode that has a resistivity of 2.5 μ·cm. What is the electric field needed to support this drift current density?In the practical diode model, which one does the diode current not depend on? a-Voltage applied to the diode b-Leakage current in reverse polarity c-Temperature d-Planck's constant
- Determine the diode current at 20°C for a silicon diode with n = 2, Is = 0.1 mA at a reverse-bias potential of -10 V?a. Determine the thermal voltage for a diode at a temperature of 20°C. b. For the same diode of part (a), find the diode current using Eq. 1.2 if Is = 40 nA, n = 2 (low value of VD ), and the applied bias voltage is 0.5 V.A silicon diode has a reverse saturation current of 1.17 nA and forwards bias voltage of 0.4 V at a temperature of 25°C, find a) The ideality factor; b) The Thermal Voltage; c) The forward bias current
- Sketch the energy band diagram for an ideal p+-n step junction diode showing the carrier activity in and near the depletion region when (a) VA = 0. (b) VA > 0. (c) VA < 0Consider the diode circuit shown and by assuming Vγ = 0.6 V and rf = 20 Ω; i. determine the diode voltage VD and output voltage Vo. ii. If the diode connection is reversed (i.e., the diode is in up-side down direction), compute the new diode voltage VD and output voltage Vo.Suppose a Schottky barrier diode can be modeled by the diode equation in Eq. as shown with IS =10−7 A. (a) What is the diode voltage at a current of 50 A? (b) What would be the voltage of a pn junction diode with IS =10−15 A and n =2?
- Determine Q-point for the diodes in the circuit given below using the ideal diode model where, R1 = 12.2 kΩ, R2 = 16 kΩ, and R3 = 14 kΩ. (Note: Label the diodes from left to right.)If the current flowing through a P-N junction diode increases 10 times what is the increase in diode voltage? Assume forward-biased Si diode operating at room temperatureA silicon diode has a reverse saturation current of 1.17 nA and forward bias voltage of 0.4 mA at a temperature of 25°C, find d. The ideality factor; e. The Thermal Voltage; a. The forward bias current