Write a conclusion about PN Junction

Q: Action potential +40 Na ions in 13 2 K ions out Failed initiations Threshold -55 (5 -70 15 4 1. 2 4…

A: 1 denote by   after  resting potential stimules is applied 2)depolarization  3) repolarizatio  4)…

Q: The number of electrons is ... the acceptors concentration in P-type semiconductors. O greater than…

A: P-type semiconductors : I formed by doping the semiconductor material by group 13 elements. Thus ,…

Q: Determine Vcg in the transistor circuit shown in figure. The transistor is of silicon and has B =…

A: Given:VBB=5VVCC=10VRC=100ΩRB=10KΩ=10000Ωβ=150Its is a silicon transistor,for forward bias condition…

Q: Since the reverse (saturation) current passing through a p-n junction with an ideality factor of 1…

A: The characteristics equation for diode junction current Where VT = KBT/q  V is diode terminal…

Q: The larger the band gap, the lower the electrical conductivity at lower temperature. TRUE FALSE

A: The bandgap is one of the major factors which determines the electrical conductivity of the…

Q: Process in which conductivity of semiconductor can be drastically increase by adding controlled…

A: The conductivity of silicon is increased by adding a very small amount of impurity which is in order…

Q: In semiconductors the concept of nonequilibrium carriers distribution function provides a mean to…

A: We know that most of the the devices of interest are not in thermal equilibrium ,thus the ambient…

Q: Using KCL and KVL, solve for Vo (*hint: redraw the circuit) 10 V 5Ω Μ Μ Μ 2Ω ww 5 Ω 1Ω 3Ω

A:

Q: Q1/ At 300K, the intrinsic concentration of Ge is 2.5 x 1019 m-3. Given thet the mobility of…

A: Here at given temperature at 300 k the intrinsic concentration of th Ge is 2.5 × 10¹⁹ m-³. It also…

Q: Which one of the following junctions satisfy Ig+lD = lA+lc? Case 1 Case 2 Case 5 Case 3 Case 4 O…

A: Case 4

Q: B/ what are effects impurity atom is added to intrinsic semi-conductor on energy gap.

A:

Q: KC charge is Placed on a e 57 nF Capactiov Determine the Dohantinl accyoss the capaction

A:

Q: Explain why a p-n junction possesses capacitance.

A: Just like a capacitor stores electric charge in the form of electric field, a p-n junction has…

Q: The electrons in the conduction band are known as?

A: To Explain: What are the electrons in the conduction band called.

Q: The thickness of the PN depletion region increases when diode is

A: The depletion region of a PN junction diode is a region of immobile positive and negative charges…

Q: Two basic transport mechanisms in a semiconductor crystal are:

A: Two kinds: 1. Diffusion current: Difference in concentration of charge carriers (concentration…

Q: Compare the IV- characteristics of a silicon diode with an Ohmic device (Resistor) to show that…

A: The I-V characteristic is the curve between the voltage and the current. It represents the relation…

Q: If p-n junction is heavily doped, breakdown voltage will a) increase b) decrease c) remain same d)…

A: In p-n junction, when the doping concentration increases the depletion region length decreases. And…

Q: The reverse current in a diode is of the order of ΚΑ mA O A μA

A: The reverse current in a diode is of very small magnitude . It is of the order of micro ampere  When…

Q: Explain the mechanism of formation of a P-N junction (in equilibrium) when the two sides of the…

A:

Q: A silicon diode has reverse saturation current of 2.5mikro ampere at 300k. Calculate the forward…

A: The solution is given below

Q: Please explain, by your own words, how and why drift current and diffusion current change when the…

A: Introduction: Drift current:   By the effect of an electric field, a force is exerted on the charge…

Q: The electron density variation along the x-axis is given as [102 exp(-10 x)]. Find the diffusion…

A: Let ne denote the electron density along the x-axis. Let μe denote the electron’s mobility. Let qe…

Q: Q10 (a) State in words and in the form of a truth table the actions of the following logic gates.…

A:

Q: In a junction diode,

A: Diffusion is the phenomenon of movement of particles from region of high concentration to low…

Q: C. Activity 3 -Ohmic and Non-ohmic Materials Do this activity in a bond paper. No. of dry cells…

A:

Q: A Thermistor consist of two junction of two different metals. True or false? O false true

A: We know that a thermistor is an obstruction thermometer, or a resistor whose opposition is reliant…

Q: The width of depletion layer increases when a PN junction in forward biased.

A: In forward biasing the applied voltage oppose the potential barrier.

Q: body in steady state, and E i manent dipoles. early with E.

A:

Q: What is depletion region in PN diode?

A: The region of positive charge and negative charge on either side of the junction is termed as the…

Q: (2) luhäi To decrease the resistivity of a -3 * :semiconductor, we can Increase the carrier density…

A:

Q: What is the effect of temperature on breakdown voltage in a p-n junction?

A: A p-n junction is a single crystal formed by joining two separate pieces. For example consider a…

Q: Talk about the working areas of the FET showing this with the illustration. Several advantages of…

A: The working areas of the FET (Field effect transistor) are, The field effect transistor is a type of…

Q: Apply the Loop Rule to BCDHB.

A: The Kirchoff's voltage law or the loop rule states that the algebraic sum of all the voltage across…

Q: How does a semiconductor vary from a conductor and an insulator, and what does it do? In your…

A: Those substances which have conductivity between conductors and insulators. Such as germanium,…

Q: In the following diagram, is the junction diode forward biased or reverse biased? 15 V R2 3V

A: For forward bias, Vp > Vn

Q: The energy required to break one bond in DNA is 10-20 J. This value in eV is nearly

A:

Q: The collector current in a BJT is -3 temparature-independent a) True O b) False

A: Given questioned has aked about the collector current In a BJT is temperature independence  or not…