CHAPTER 2: BACKGROUND Deposition and characterization of the thin films discussed in Chapter 1 will require an understanding of many different tools and processes that are currently used in the semiconductor industry today. This chapter will cover the principles behind the growth process, the experimentation and the material properties. The equipment used for these processes will be discussed in depth as well.
2.1 Equipment The equipment used in the deposition of thin films can vary widely depending on what material is being grown. Different deposition techniques affect different material properties, such as: index of refraction, surface roughness, crystallinity, film quality and many others [VLSI, Seshan]. The two main techniques are physical vapor deposition (PVD) and chemical vapor deposition (CVD). These techniques are used for different materials and different processes and CVD is the deposition technique this thesis focuses on. These techniques are implemented in different deposition systems with many different features and they have a wide range of applications. After the material is grown, the parameters of the material need to be characterized. This requires a complete understanding of the tools which are being operated. Different tools are necessary to determine the different important parameters of a material such as: reactive ion etchers, ellipsometers, atomic force microscopes, and x-ray diffraction spectroscopes. An inductively coupled plasma reactive ion
The aim of this experiment was to measure the angle between a metal surface and a liquid droplet using a CCD camera and optics. This experiment also investigated how metal surfaces coated with single-molecule layers of functionalized alkanethiols and alkanethiols alter the wetting behavior and metal surface energy.
Compared to TiO2, Figure 26a and 26b, which represent the XRD for titania film, it is observed that the crystallinity increases with temperature, which is the same behavior as with zinc oxide films. Furthermore, there is great difference between the samples with SiO2 layer and those without barrier layer. In the samples without barrier layer, sodium diffusion inhibit crystals growing in the film [7].
Copper doped mullite samples of different strengths were added to the solution and stirred at the temperature mentioned above for overnight. The films were preparedwith mass fractions of copped doped mullite of 20%. Then it was sonicated in a bath type sonicator for an additional hour to further enhance the dispersion and to eliminate air bubbles simultaneously. Then the ultimate solution was cast and incubated in an oven at 70C for 1-2 hours until film forms. The complete process has been shown in the form of flowchart in Fig.
Density growth is the solution for a sustainable city, more affordable housing and a better quality of life. People usually surprise about that
By sеvеral diffеrеnt mеthods, including mеtal-organic vapour phasе еpitaxy (MOVPЕ), molеcular bеam еpitaxy (MBЕ) and pulsеd lasеr dеposition (PLD), thе ZnO еpitaxial layеrs and quantum wеlls havе bееn grown. Thе growth in c-axis oriеntеd dеspitе growth on a rangе of singlе crystal substratеs, including ZnO, sapphirе and Si oriеntеd along various crystal
Like most things crystals don’t start out from nothing. They grow. To understand how crystals grow, scientists must know what they are. Crystals are a type of solid that forms by two different molecules chaining together repeatedly. The process doesn’t actually start that way. It starts with nucleation, which is a process that starts with the lone molecules or another solid matter in the solution. They all have different shapes and sizes based on their growth rate and internal symmetry. When the lone molecules start the process, it’s called unassisted nucleation. In unassisted nucleation, the “solute” in the solution finds other solute molecules, which means they are attracted to each other. Usually these two molecules would be pulled
I began conducting personal research in thermal metal thin film deposition. My research objective was to develop a method of creating an epitaxial thin film of nickel on a silicon substrate. During my research I observed how nickel thin films properties changed as the crystalline structure of my thin film transformed from face-centered-cubic, to a mono-crystalline structure. I developed epitaxial nickel thin films through a process of thermal deposition of nickel onto a heated p-type silicon wafer substrate. This research experience was an important milestone, as it defined my perseverance and drive to pursue material science
4.2.6 Print Output Parameters ........................................................................... 5.0 2D and 3D MOC Tool Verification ...................................................................... 2D MOC Tool Verification ............................................................................... 5.1 3D MOC Tool Verification .............................................................................. 5.2 6.0 Summary............................................................................................................... 2 5 5 7 7 10 10 11 12 12 12 13 13 13 14 14 15 16 16 18 18 19 20 23 23 23 26 27 27 28 29 30 31 31 32 32 32 33 33 34 34 36 36 36 40 J O ~ HO~KINS Applied physics Laboratory S MD Laurel U N I V
Thus, as illustrated in Fig. 1d [5, 6], a high │dT/d(fS)1/2│ suggests a slow transverse growth rate for the columnar grains to grow toward each other to bond together and resist cracking. A high │dT/d(fS)1/2│ also suggests that the grains can grow much more slowly in the transverse direction than in the forward direction z, thus forming a long liquid channel along the grain boundary. Because of the viscosity of liquid, a long grain-boundary channel can resist the flow of the intergranular liquid that is needed to quickly feed shrinkage and resist cracking [7]. Furthermore, a long grain-boundary channel can also act as a very sharp notch to help crack propagation. Thus, an alloy with a higher │dT/d(fS)1/2│near (fS)1/2 = 1 can be expected to
The process parameters such as concentration of the precursor solution, type of solvent, doping material, spray nozzle geometry, flow rate of carrier gas and solution, velocities of sprayed droplets, nature and temperature of the substrate, kinetics and thermodynamics of the pyrolytic reaction mainly determine the properties of the spray deposited films.
The morphology of SPNE was observed by scanning electron microscopy (SEM). The typical FE-SEM images of the pristine carbon printed ITO electrode and 50 wt% SPNE electrode are shown in Figures 2(a) and 2(b), respectively.
Atomic Force Microscopy was the method used to analyze samples inorder to identify their surface composition and determine their top structure. Compiled data was used to calculate the roughness of the sample.
Different combinations of n and p-type doping are used to create electronic components such as transistors, capacitors, and diodes. Silicon became the top semiconductor in the 1960s due to the oxide layer it forms, its ability to perform at higher temperatures, and its availability in nature. When exposed to air, silicon forms a silicon dioxide layer on its surface that serves as an excellent insulator allowing for small interference between different components. Compared to germanium, silicon is able to perform at higher temperatures which becomes important when there are several different components on a chip operating and generating heat. Silicon is also readily available in nature, as it is a main component in sand whereas germanium is difficult to extract in large quantities making it more expensive.
Deposition of hybrid coatings is also possible using AP-PECVD by utilizing vapor of hybrid organic-inorganic monomer and an organic monomer which can result in bringing excellent barrier properties.[44] Also, as it is mentioned in the literature, with AP-PECVD, working with a combination of two precursors with different phases, is possible.[44] Also deposition of thin organic coatings with a biomolecule embedded in them has shown for AP-PECVD.[51, 52]
Dc glow discharges are widely applied for depositing thin films, etching, plasma polymerization, oxidation, and pumping gas discharge lasers, etc. Therefore the research into the conditions of the dc glow discharge is of considerable interest [1]-[6]. Plasmas are ionized