1. Consider a CMOS NAND gate, as shown in Fig. 6-3, p. 159, of the textbook. The two inputs A and B are connected together, and tied to an input voltage VIN. The transistors have Kn = Kp, VDD = 2.0 V, Vtn = 0.5 V, and Vtp = -0.5 V. There is a point on the voltage transfer curve, VTC, where the NMOS transistors are at the saturation/nonsaturation boundary, and the PMOS transistors are in saturation. This occurs at the boundary between bias regions III and IV in Fig. 5-4, p. 128, in the text. Calculate Vin and Vout at this bias point. Remember that two parallel transistors have twice the drive state of a single transistor, and two series transistors have half the drive state of a single transistor. 2. Calculate the power supply current, IDD, at the bias point in problem 1. Take Kn = Kp = 400 µA/V².

1. Consider a CMOS NAND gate, as shown in Fig. 6-3, p. 159, of the textbook. The two inputs A and B are connected together, and tied to an input voltage VIN. The transistors have Kn = Kp, VDD = 2.0 V, Vtn = 0.5 V, and Vtp = -0.5 V. There is a point on the voltage transfer curve, VTC, where the NMOS transistors are at the saturation/nonsaturation boundary, and the PMOS transistors are in saturation. This occurs at the boundary between bias regions III and IV in Fig. 5-4, p. 128, in the text. Calculate Vin and Vout at this bias point. Remember that two parallel transistors have twice the drive state of a single transistor, and two series transistors have half the drive state of a single transistor. 2. Calculate the power supply current, IDD, at the bias point in problem 1. Take Kn = Kp = 400 µA/V².

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

An N-channel MOSFET with N+-poly gate is fabricated on a 15 n. cm P-type Si wafer (a) Determine the flat-band voltage Vfb. (b) What is the threshold voltage, Vt? (c) A circuit designer requested N-MOSFET with Vt = 0.5 V from a device engineer. It was not allowed to change the gate oxide thickness. If you are the device engineer, what can you do? Give specific answer.; including what type of equipment to use.
Most of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true? Select one: a. Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit b. Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction c. Each transistor on an integrated circuit is manufactured individually,one at a time d. An integrated circuit contains several layers
There are three different main semiconductor devices of FETs which are JFET, D-MOSFET, and E-MOSFET. All of them are also known as active semiconductor devices. i) Briefly explain the different between JFET and D-MOSFET. ii) Given that Vp = - 6 V and IDSS = 10 mA. Draw the transfer characteristics of n-channel JFET using shorthand method. iii) State the general relationship of JFET, D-MOSFET, and E-MOSFET.
For the circuit, take VTN=0.8V, the conduction parameter Kn-1 mA/V2 and X-0. Calculate the Gate-Source voltage VGS and drain- source voltage VDS. Choose one of the answer choices that is closest to what you have found. +6V A B VGS-1.27V and VDS-10.32V VGS-2.3V and VDS-6.8V C) VGS-1.12V and VDS-8.44V Cc HE www R₁ = 85 k R₂ = 20 k -6V RD=8k 010 Rs = 1 k
find gate voltage,if gate-cathode characteristics has a slope of 100 and gate power dissipation is 0.9W. a. 8.4V b. 3.4V c. 9.4V d. 4.4V
In a N-Channel JFET if the voltage across the gate and source (VGs) is increased then explain in detail with neat diagram the changes in drain current. Justify your answer. ii) The reverse gate voltage of JFET when changes from 4.4 V to 4 V, the drain current [- changes from 2.2 mA to 3 mA. Calculate the value of transconductance of the transistor. e here to search
Given: Vth is 1.2V and k is 0.5 mA/V² Solve for the following with at least 4 significant figures. Current is in mA and Voltages in V. 1. Id, Vgs, Vds. 2. Verify your MOSFET's mode of operation.
Figure 1 shows the typical output characteristics of MOSFET. Those characteristics show the difference curve of the drain current, Ip, as function of the drain- source voltage, VDs at a given gate-source voltage, VGs. In the Figure 1, it shows that the Ohmic region. What the meaning of the Ohmic region? Explain with necessary example any consequences that will happen for any condition of MOSFET. 360 10 V ev 7V 320 280 Ohmic region + 240 200 160 120 5.5 V- 80 40 2 3 Vos [V] Figure 1 lo [A]
Q4/ For a transistor, the current gain = 45 and %3D voltage drop across 1kQ which is connected in the collector circuit is 1 volt. Find the base current for common emitter connection shown in circuit. O A. 27 mA O B. 0.011 mA O C. 0.22 mA O D. None of the above
a) Draw the symbol of n-channel D-MOSFET. b) Draw the transfer characteristics of p - channel E - MOSFET. Į c) A Zero - biased n - channel D - MOSFET has a drain current Ip flowing with VGs = 0 V. Draw %3D the circuit diagram. Given that VDD = 14 V, Vp = 5 V, Rp = 700 and Ipss = 14 mA. find the value %3D of Vps-
&ms (V) 1.0 0.8 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 1014 1015 p+ poly (n Si) Au (n Si) -p+ poly (p Si) Au (p Si) n poly (n Si) + Al (n Si) Al (p Si) n+ poly (p Si) 1016 1017 NB (cm-3) 1018 Consider a MOS device with a p-type silicon substrate with N₁ = 1 X 10¹4 cm-³. The oxide thickness, tox, is 20 nm and the equivalent oxide charge 'SS 4 X 10-10 C/cm². Use the figure above to find the metal-semiconductor work function differences and use them to find the threshold voltage for an aluminum gate.
A silicon transistor is biased with base resistor method. If B=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the %3D value of the base resistor RB? Select one: a. 530 kQ b. 105 kQ c. 315 k. d. None of the above