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1. Design a CMOS inverter using 0.25um CMOS devices, such that VM-VDD/2. Assume that the NMOS and PMOS device parameters are given below and VDD=2.5V and (W/L)n=1.5. • In our generic 0.25 micron CMOS process, using the process parameters from table a VDD = 2.5V, and a minimum size NMOS device ((W/L), of 1.5) VTO (V) (V0.5) VDSAT(V) 0.4 0.63 -0.4 -0.8 NMOS 0.43 PMOS -0.4 K'(A/V²) 115 x 10-6 -30 x 10-6 2(V-¹) 0.06 -0.1 2. Estimate all static parameters of the inverter in problem 1, including VOL, VOH, VM, VIL, VIH, NML, and NMH.

1. Design a CMOS inverter using 0.25um CMOS devices, such that VM-VDD/2. Assume that the NMOS and PMOS device parameters are given below and VDD=2.5V and (W/L)n=1.5. • In our generic 0.25 micron CMOS process, using the process parameters from table a VDD = 2.5V, and a minimum size NMOS device ((W/L), of 1.5) VTO (V) (V0.5) VDSAT(V) 0.4 0.63 -0.4 -0.8 NMOS 0.43 PMOS -0.4 K'(A/V²) 115 x 10-6 -30 x 10-6 2(V-¹) 0.06 -0.1 2. Estimate all static parameters of the inverter in problem 1, including VOL, VOH, VM, VIL, VIH, NML, and NMH.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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1. Design a CMOS inverter using 0.25um CMOS devices, such that VM=VDD/2. Assume that the NMOS and PMOS device parameters are given below and VDD=2.5V and (W/L)n=1.5. • In our generic 0.25 micron CMOS process, using the process parameters from table a Vpp = 2.5V, and a minimum size NMOS device ((W/L), of 1.5) VTo(V) y(V05) VDSAT(V) k'(A/V2) 2(V-1) NMOS 0.43 0.4 0.63 115 x 10-6 0.06 PMOS -0.4 -0.4 -0.8 -30 x 10-6 -0.1 2. Estimate all static parameters of the inverter in problem 1, including VoL, VOH, Vm. VIL, VIH, NML, and NMH.
Transcribed Image Text:1. Design a CMOS inverter using 0.25um CMOS devices, such that VM=VDD/2. Assume that the NMOS and PMOS device parameters are given below and VDD=2.5V and (W/L)n=1.5. • In our generic 0.25 micron CMOS process, using the process parameters from table a Vpp = 2.5V, and a minimum size NMOS device ((W/L), of 1.5) VTo(V) y(V05) VDSAT(V) k'(A/V2) 2(V-1) NMOS 0.43 0.4 0.63 115 x 10-6 0.06 PMOS -0.4 -0.4 -0.8 -30 x 10-6 -0.1 2. Estimate all static parameters of the inverter in problem 1, including VoL, VOH, Vm. VIL, VIH, NML, and NMH.
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