1. See example 4.2 on page 112. For silicon at 300 K, calculate the clectron concentration, no for the following scenarios. Ec- EF=0.25 eV Ec- Er-0.35 eV b. Ec- Er- 0.45 eV Calculate the hole concentration, po for the following d. EF-Ev=0.25 eV EF-Ev- 0.35 eV Er -Ev=0.45 eV

1. See example 4.2 on page 112. For silicon at 300 K, calculate the clectron concentration, no for the following scenarios. Ec- EF=0.25 eV Ec- Er-0.35 eV b. Ec- Er- 0.45 eV Calculate the hole concentration, po for the following d. EF-Ev=0.25 eV EF-Ev- 0.35 eV Er -Ev=0.45 eV

Delmar's Standard Textbook Of Electricity

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ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

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Gradient of a Scalar Field

Consider a room or a place where the temperature is denoted by a scalar field T, such that at each point (x, y, z), the temperature is given as T(x, y, z). It is independent of time, in which the temperature rises most quickly. The gradient of T will show the direction at that point by moving away from (x, y, z). How far will the rise in temperature in that direction be determined by the gradient magnitude? Consider a surface that has a height above sea level at point (x, y) which is given by H(x, y). At that point, pointing in the direction of the steepest slope or grade is the gradient of H. The magnitude of the gradient of the vector gives the steepness of the slope at that point. How a scalar field changes in another direction can be measured by the gradient by taking a dot product rather than just the direction of the greatest change?

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Take NV=1.04x(10^19)

1. See example 4.2 on page 112. For silicon at 300 K, calculate the clectron concentration, no for the following
scenarios.
Ec- EF=0.25 eV
Ec- EF=0.35 eV
Ec - Er= 0.45 eV
a.
b.
Calculate the hole concentration, po for the following:
d.
EF- Ev= 0.25 eV
EF - Ev- 0.35 eV
EF - Ev- 0.45 eV

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