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- Boron gas is used to dope the silicon wafer to a dopant concentration of 10¹6 / cm³. After letting the sample cooldown to 300K (a) What is the new number of free electrons and holes in equilibrium? (b) What type of semiconductor do we have after the process?Calculate the intrinsic carrier concentration of a semiconductor in units of (cm-3). Use the room temperature bandgap and effective density of states. Assume the parameters given below: Semiconductor: Germanium Temperature: 206 (K)Estimate the amount of free electrons and holes in a N-doped Silicon wafer a) at room temperature with 1014 cm-3 doping level, and b) at 650K with 1015 cm-3 doping level
- Assume D = D0e^–Ea/kT is the diffusion coefficient of boron in silicon surface, whereD0 = 10.5 cm^2/s and Ea = 3.7 eV. The substrate is N-type silicon doped to 10^15 cm^3.N0 = 10^15 cm^2 of boron is introduced just below the silicon surface.(a) What is the junction depth after a 1-h drive-in at 1,100°C?(b) By how much will the junction depth change after 10^6 h (~100 years) of operation at100°CA silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 AThe applied electric field in p-type silicon is E=10V/cm. The semiconductor conductivity is 1.5(Ω-cm)-1and cross-sectional area is 10-5cm2. Determine the driftcurrent. (b) A drift current density of 120A/cm2is established in n-type silicon with an applied electric field of 18V/cm. If the electron and hole mobilities are µn =1250 cm2/V-s and µp =450 cm2/V-s, respectively, determine the required doping concentration.
- A particular semiconductor is doped at ND=8xl0l6 cm-3 and NA=2xl0l6 cm-3 and ni=1010 cm-3. Assume complete ionization. Determine thermal equlibrium concentrations of majority- and minority-carrier concentrations. Lütfen birini seçin: Majority carrier; no= 8xl0l6 cm-3 Minority carrier; po = 1250 cm-3 Majority carrier; no = 6xl0l6 cm-3 Minority carrier; po = 1666 cm-3 Majority carrier; no= 2xl0l6 cm-3 Minority carrier; po = 5000 cm-3An n-type semiconductor with direct band structure (Eg = 2.5 eV) is applied with a DC voltage shown below. (i) Schematically draw the band diagram for this semiconductor under this DC voltage. (ii) Calculate the longest wavelength in light absorption from this n-type semiconductor with applied DC voltage.A diode has wdo = 1.5 μm and φj = 0.8 V. (a) What is the depletion layer width for VR =5V? (b) For VD = −10 V?
- Consider the diode circuit shown below. If Vs is a sinewave with a peak amplitude of 12 Volts at 60Hz, and diodes D1 & D2 are considered ideal, sketch the appearance of the waveform at node voltage Vout . Sketch the appearance of the waveform at Vout .Elaborate the following with Scientific Reason a. Why Intrinsic Semiconductor materials are the bad conductors of electricity? Elaborate the process to make them full conductors b. Elaborate the concept and importance of Majority Carriers and Minority Carriers inside P-N Junction c. Elaborate why Depletion Zone inside P-N Junction is a problematic area? What necessary measurement should be taken to remove the depletion zone?An intrinsic semiconductor with an intrinsic hole concentration of pi = 1.45x10^10/cm^3, has been doped with a trivalent atom generating a majority hole concentration of pp = 20^20/cm^3. Find the resulting minority carrier concentration.