clear and correct or dislike 2. Given the relaxation oscillator in the figure below and with the following specifications:RBB= 5kQ, n=0.6, V,=1V, 1=10mA, 1,=10µA, R=50k2, R1=0.5kQ and R2=0.1ko+Vcca. Determine RgBI and R82 at IE=0A.b. Calculate Vp, voltage necessary toR2turn ON the UJTB2c. Determine whether R is within thepermissible range ofB1to ensure firing of the UJT.R1

Given information: RBB=5 kΩ. η=0.6. Vv=1 Volt. Iv=10 mA. Ip=10 μA. R=50 kΩ. R1=0.5 kΩ. R2=0.1 kΩ.…

Answered: 2. Given the relaxation oscillator in…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Answer all subparts In the circuit below the LED emits a sufficient light when saturated. Given that: VCC = 10 V, RC = 200 Ω, RB = 3.9 kΩ, βDC = 60, VCE (sat) = 0.2 V and VLED = 1.3 V. - Determine the minimum value of base current. - Determine the amplitude of the input voltage necessary to saturate the transistor. Use double the minimum value of base current as a safety margin to ensure saturation. - Determine the amplitude of the input voltage necessary to cut-off the transistor. - What is the main application when the transistor operation between cut-off and saturation?
The LED in Figure below requires 30 mA to emit a sufficient level of light. Therefore, the collector current should be approximately 30 mA. For the following circuit values, determine the amplitude of the square wave input voltage necessary to make sure that the transistor saturates. Use double the minimum value of base current as a safety margin to ensure saturation. VCC = 8 V, VCE(sat) = 0.3 V, RC = 200 Ω , RB = 3.3 kΩ , b (beta) = 45, and VLED = 1.6 V.
Determine the value of RF necessary for the three stage RC phase-shift to operate as a stable and sustained oscillator with R=10Kohm, and C=0.003µf. determine the frequency of oscillation, design the final circuit of phase-shift.
The following are the required circuit parameters for the T1 transistor in the following circuit. VBE=0.7 V, β=100, Cbc=Cμ=100pF,Cπ=Cbe=200pF, VA=∞, VT=26mV, and ro negligence;a) Find IB, IC, IE currents.b) Find VCE, VB, VC and VE voltages.c) Set the Q working point by drawing the load line of the circuit.d) Find the lower sector frequency value.e) Find the upper cut frequency value.R: 409
A 5-V, 10-MHz oscillator have a rise/falltime of 10ns and a 50% duty cycle is applied to a gate. Determine the value of the capacitance such that the 5th harmonic is reduced by 20 dB in the gate voltage Vg(t).
In the circuit in the figure, VGSQ = 6.8 V, IDQ = 2.4 mA, VGS(Th) = 3.3 V, k = 0.4x10-3 A/V2, RD = 5.6 kΩ, RF = 2.2 MΩ and rd = 25 kΩ. Accordingly, when a RL = 23.6 kΩ load is connected to the output of the circuit, what will be the voltage gain of the circuit? NOTE: MOSFET output resistance must be taken into account in rd calculations.
An InGaAsP heterojunction phototransistor has a common emitter current gain of 170 when operating at a wavelength of 1.3 um with an incident optical power 0f 80 uW. The base-collector quantum efficiency at this wavelength is 65%. Estimate the collector current i the device,
Design a Single-Stage Common Emitter Class A Amplifier Specifications:Voltage Divider Bias Circuit Supply: Any value from 10Vdc to 24VdcLoad: 1kΩVoltage Gain: Any value from 80 to 400Lower Cutoff Frequency: 100 HzSinusoidal source (zero internal resistance): 50mVp-pTransistor: Si, β = 75 • Base-Collector capacitance = 8pF • Base-Emitter Capacitance = 25pF a) compute for the biasing resistances.b) determine the dc transistor terminal voltages and transistor currents.
The following are the required circuit parameters for the T1 transistor in the following circuit.VBE=0.7 V, β=120, Cbc=Cμ=100pF, Cπ=Cbe=220pF, VA=∞, VT=26mV, and ro negligence; d) Find ro output resistance. e) Find the lower cut frequencies. f) Find the upper cutting frequencies
For the given circuit and the input waveform, answer the following questions: 1) Calculate the saturation current IC(sat). Then, for each time period of Vin waveform, calculate the value of VCE and determine the state of the transistor. Assume that: VCC = 12 V, RB = 5 kΩ, RC = 600 Ω, and VCE (sat) = 0.2 V. 2) Given that Vin = 2 V, and the transistor datasheet gives the following maximum ratings: PD(max) = 280 mW, VCE(max) =10 V, and IC(max) = 100 mA. Determine the maximum value to which VCC can be adjusted without exceeding a rating. Which rating will be exceeded first? Explain your answer.
2. a) Design a 9v DC oscillator circuit that produces a frequency of 500 Hz. The circuit may use a 555 timer or two transistor design(s). Show all calculations including the DC currents and bias voltages. Include the schematic and the required frequency formula(s). b) As a bonus, if a larger load were required to be connected to the chip, how would the schematic look and what components would be used to do design it? Also, as a theoretical approximation, if the 9v battery had a rating of 4 amp-hours, how long would it last powering this circuit? Show calculations to illustrate how you arrived at the answer.
Consider a CE circuit, where trans-conductance is 50mΩ-1, diffusion capacitance is 100 pF, transition capacitance is 3 pF. IB = 20μA. Given base emitter dynamic resistance, rbe = 1000 Ω, input VI is 20*sin(107t). What is the short circuit current gain?

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