2. The concentration of donor impurity atoms in silicon is Nd = 1015 cm-3. Assume an electron mobility of u, = 1300 cm2/V-s and a hole mobility of u,= 450 cm2/V-s. (a) Calculate the resistivity of the material. (b) What is the conductivity %3D of the material?
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- A silicon sample is supporting an electric field of −1500 V/cm, and the mobilities of electrons and holes are 1000 and 400 cm2/V·s, respectively. What are the electron and hole velocities? If p=1017/cm3 and n=103/cm3, what are the electron and hole current densities?The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differA silicon sample at room temperature is doped with gallium (Ga) from one side such that Ndoping=38.85x1015e−x/α , α = 0.5 µm, and Ndoping >> ni. Calculate the electric field at x= 1µm.
- An n-type semiconductor sample has an electron density of 6.25x10^18/cm^3 at 300K.If the additive-free concentration of the carriers is 2.5x10^13/cm^3, what is the hole density at this temperature?Silicon cylinder of radius r = 1 cm carries a current of 100 mA at roomtemperature.What is the intrinsic carrier (electrons n and holes p) drift speed?We inject electrons into a p-type semiconductor 5 microns long such that the concentration varies linearly from 10E20 cm^-3 to 0 from left to right. If the mobility of the electrons is 500 cm^2/V.s, what is the current density if the electric fields are negligible?
- Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration of (1×1016electron/m³) with the doping concentration of (2×1016atoms/m³) of the phosphorus and (1×1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s), the mobility for the holes (0.05m2/V.s), the electric field (100V/m), and the cross section area is 1mm?.Hall measurement is conducted on a silicon sample of unknown doping with W= 100cm, A = 2.5 × 10-3cm2, I = 2 mA and the magnetic field is 500 Gauss. If the Hall voltage of +150mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity and mobility of the semiconductor sample.conducting line on an IC chip is (2.8 mm) long, and has a rectangular cross-section (1x 4 um). A current of (5 mA) produces a voltage drop of (100 mV) across the line. Determine the electron concentration given that the electron mobility is (500 cm²/V.Sec.).
- A sample of n-type silicon semiconductor has the following properties:Donor density Ndis 5x1019per cm3Mobility of electron is 1500 Mobility of hole is 500Electron charge q = 1.602x10-19coulombs.Intrinsic carrier density ni= 1.45x1010per cm3a)Find the density of holes and electrons in this sampleb)Find the conductivity of the given sample if the. c)What is the resistivity of the given sample?A silicon semiconductor is in the shape of a rectangular bar with a crosssectional area of 10 μm × 10 μm, a length of 0.1 cm, and is doped with Arsenic at 5 × 1016 atoms/cm3 concentration. (T = 300 K).a) determine the current if 5 V is applied across the length. b) repeat part (a) if the length is reduced to 0.01 cm. c) calculate the average drift velocity of electrons in parts (a) and (b). (µn=1350 cm2/volt-s)Consider germanium Ge and GaAs material. Which material has lower intrinsic carrier concentration ni at a fixed temperature and what is the principal reason for that? Don,t copy from anywhere.Answer follow question step by step.