Below the temperature dependence of charge carrier concentrations of intrinsic semiconductors Ge and Si are given. Based on this graph a) determine the band gaps of these materials, b) determine the the energy difference between the Fermi Energy and the conduction band and c) determine the electrical conductivities of Ge and Si at room temperature. Assume electron and hole mobilities are 0.8 and 0.01 V/cm².sec, respectively, for both materials 1028 1026 1024 Ge 1022 Si 1020 1018 1016 1014 1012 1010 10 106 200 400 600 800 1000 1200 1400 1600 1800 T (K) Intrinsic carrier concentration (m)

Below the temperature dependence of charge carrier concentrations of intrinsic semiconductors Ge and Si are given. Based on this graph a) determine the band gaps of these materials, b) determine the the energy difference between the Fermi Energy and the conduction band and c) determine the electrical conductivities of Ge and Si at room temperature. Assume electron and hole mobilities are 0.8 and 0.01 V/cm².sec, respectively, for both materials 1028 1026 1024 Ge 1022 Si 1020 1018 1016 1014 1012 1010 10 106 200 400 600 800 1000 1200 1400 1600 1800 T (K) Intrinsic carrier concentration (m)

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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