I Homework 4 02262022.docx.pdf - Adobe ReaderFileEdit View Window Help/ 3Tools Fill & Sign CommentОpen2200%IT2. Total current in a semiconductor is constant and is composed ofelectron drift current and hole diffusion current. The electronconcentration is constant and equal to 5 x 1015 cm-3Hole concentration is given byp(x) %—D 2 х 1015 еxр (--)expст3for x >0where L = 10 µm.Hole diffusion coefficient is D, =12 cm²/s. Electron mobility isUn = 1000 cm?/V-s. Total current density is J = 4.5 A/cm?.(a) Calculate hole diffusion current density versus x(b) Electron current density versus x(c) Electric field versus x.12:40 AMType here to search日26°CW04-Mar-22

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2. Total current in a semiconductor is constant and is composed of electron drift current and hole diffusion current. The electron concentration is constant and equal to 5 x 1015 cm-3 Hole concentration is given by p(x) = 2 x 1015 exp (-÷) () cm³ for x >0 where L 10 µm. Hole diffusion coefficient is Dp = 12 cm?/s. Electron mobility is Un = 1000 cm?/V-s. Total current density is J= 4.5 A/cm?. (a) Calculate hole diffusion current density versus x (b) Electron current density versus x (c) Electric field versus x.

2. Total current in a semiconductor is constant and is composed of electron drift current and hole diffusion current. The electron concentration is constant and equal to 5 x 1015 cm-3 Hole concentration is given by p(x) = 2 x 1015 exp (-÷) () cm³ for x >0 where L 10 µm. Hole diffusion coefficient is Dp = 12 cm?/s. Electron mobility is Un = 1000 cm?/V-s. Total current density is J= 4.5 A/cm?. (a) Calculate hole diffusion current density versus x (b) Electron current density versus x (c) Electric field versus x.

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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