Given a Si sample of unknown doping, Hall measurement has been made and the following information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2 , I = 2.5 mA, and the magnetic field is 30 nT (1T = 10^-4 Wb/cm2). If a Hall voltage of +10 mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity, and mobility of the semiconductor sample.

Given a Si sample of unknown doping, Hall measurement has been made and the following information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2 , I = 2.5 mA, and the magnetic field is 30 nT (1T = 10^-4 Wb/cm2). If a Hall voltage of +10 mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity, and mobility of the semiconductor sample.

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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Given a Si sample of unknown doping, Hall measurement has been made and thefollowing information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and themagnetic field is 30 nT (1T = 104 Wb/cm2). If a Hall voltage of +10 mV is measured, findthe Hall coefficient, conductivity type, majority carrier concentration, resistivity, and mobility of the semiconductor sample.
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