3) The work functions of gallium antimonide (GaSb), gallium phosphide (GaP) and gallium nitride (GaN) semiconductors 0.73, 2.24 and 3.4 eV, respectively are (https://www.rp-photonics.com/band gap.html). Calculate: a) the threshold frequencies v. for the gallium antimonide, gallium phosphide and gallium nitride semiconductors. b) the longest wavelength of the electromagnetic radiation that can eject electron from the gallium antimonide, gallium phosphide and gallium nitride. c) If it is planned to use them in visible light, which of them is selected? Why? d) If you plan to use the semiconductor as photocatalyst at 450 nm in visible region, is it possible to eject electron from the appropriate semiconductor?
3) The work functions of gallium antimonide (GaSb), gallium phosphide (GaP) and gallium nitride (GaN) semiconductors 0.73, 2.24 and 3.4 eV, respectively are (https://www.rp-photonics.com/band gap.html). Calculate: a) the threshold frequencies v. for the gallium antimonide, gallium phosphide and gallium nitride semiconductors. b) the longest wavelength of the electromagnetic radiation that can eject electron from the gallium antimonide, gallium phosphide and gallium nitride. c) If it is planned to use them in visible light, which of them is selected? Why? d) If you plan to use the semiconductor as photocatalyst at 450 nm in visible region, is it possible to eject electron from the appropriate semiconductor?
Principles of Instrumental Analysis
7th Edition
ISBN:9781305577213
Author:Douglas A. Skoog, F. James Holler, Stanley R. Crouch
Publisher:Douglas A. Skoog, F. James Holler, Stanley R. Crouch
Chapter2: Electrical Components And Circuits
Section: Chapter Questions
Problem 2.10QAP
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