3. a) Consider an NMOS transistor fabricated in a 0.18-µm process with L=0.18 µm and W=2 µm. The process technology is specified to have Cox = 8 fF/µm², µn = 450 cm2/V.s and Vu=0.55 V. (i) Find VGs and Vps that result in the MOSFET operating at the edge of saturation with Ip = (100+X) µA. Where X=Last digit of your ID+2.5. (ii) If VGs is kept constant, find Vps that results in Ip= 50 µA. (iii) To investigate the use of the MOSFET as a linear amplifier, let it be operating in saturation with Vps = 0.3 V. Find the change in Ip resulting from VGs changing from 0.7 V by +0.01 V and by -0.01 V.
3. a) Consider an NMOS transistor fabricated in a 0.18-µm process with L=0.18 µm and W=2 µm. The process technology is specified to have Cox = 8 fF/µm², µn = 450 cm2/V.s and Vu=0.55 V. (i) Find VGs and Vps that result in the MOSFET operating at the edge of saturation with Ip = (100+X) µA. Where X=Last digit of your ID+2.5. (ii) If VGs is kept constant, find Vps that results in Ip= 50 µA. (iii) To investigate the use of the MOSFET as a linear amplifier, let it be operating in saturation with Vps = 0.3 V. Find the change in Ip resulting from VGs changing from 0.7 V by +0.01 V and by -0.01 V.
Introductory Circuit Analysis (13th Edition)
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Chapter1: Introduction
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Last Digit of my Id=2
Transcribed Image Text:3. a) Consider an NMOS transistor fabricated in a 0.18-µm process with L= 0.18 µm and W = 2 µm.
The process technology is specified to have Cox = 8 fF/µm², µn = 450 cm2/V.s and Vin= 0.55
V.
(i) Find VGs and VDs that result in the MOSFET operating at the edge of saturation with Ip:
(100+X) µA. Where X=Last digit of your ID+2.5.
%3D
(ii) If VGs is kept constant, find Vps that results in Ip= 50 µA.
(iii) To investigate the use of the MOSFET as a linear amplifier, let it be operating in saturation
with VDs = 0.3 V. Find the change in Ip resulting from VGs changing from 0.7 V by +0.01 V
and by -0.01 V.
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