3. a) Draw the static CMOS schematic to implement the Boolean function F = AB+CD+E without using an additional inverter. b) Find the side (width) of each transistor with respect to the current strengths in the inverter shown below. Size the NMOS for the worst case pull down, and the PMOS for the worst case pullup. VDD 4W 3W

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3. a) Draw the static CMOS schematic to implement the Boolean function F = AB+CD+E
without using an additional inverter.
b) Find the side (width) of each transistor with respect to the current strengths in the
inverter shown below. Size the NMOS for the worst case pull down, and the PMOS for the
worst case pullup.
VDD
4W
3W
Transcribed Image Text:3. a) Draw the static CMOS schematic to implement the Boolean function F = AB+CD+E without using an additional inverter. b) Find the side (width) of each transistor with respect to the current strengths in the inverter shown below. Size the NMOS for the worst case pull down, and the PMOS for the worst case pullup. VDD 4W 3W
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P-channel Metal-Oxide Semiconductor (PMOS), N-channel Metal-Oxide Semiconductor (NMOS), and Complementary Metal-Oxide Semiconductor (CMOS)
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