Q2 Draw the schematic circuit for a resistively loaded NMOS inverter and the relative voltage transfer characteristic where the different regions of operation of the transistor are shown. (a) Wnite the finite static power dissipation P for a resistively loaded NMOS mverter. What is the main origin of P? (b) Draw the schematic of a CMOS inverter with a load capacitance of 40 pf attached to the output. Calculate the dynamic power dissipation, if there is a square wave input signal switching at 25 MHz with an amplitude of Vpo=5 V. (c) For the calculation consider Ve= Vo and V =0. %3D DD

Q2 Draw the schematic circuit for a resistively loaded NMOS inverter and the relative voltage transfer characteristic where the different regions of operation of the transistor are shown. (a) Wnite the finite static power dissipation P for a resistively loaded NMOS mverter. What is the main origin of P? (b) Draw the schematic of a CMOS inverter with a load capacitance of 40 pf attached to the output. Calculate the dynamic power dissipation, if there is a square wave input signal switching at 25 MHz with an amplitude of Vpo=5 V. (c) For the calculation consider Ve= Vo and V =0. %3D DD

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Find the ratio of hole mobility to electron mobility of a CMOS inverter given that the beta ratio of pull-up network to pulldown network is 1.5 (Assume that W/L ratio of pMOS is 3 times greater than that of nMOS and all other parameters are same for both) Assuming the supply voltage to be 3V draw a suitable DC transfer characteristic curve of the CMOS inverter.
Design an asymmetrical inverter to meet the delay specification a symmetrical CMOS reference inverter to provide a propagation delay of 400 ps fora load capacitance of 200 fF. Use VDD =2.5 V, VTN =0.60 V, and VTP =−0.60 V.with (W/L)P = (W/L)N .
1. An NMOS inverter must drive a load capacitance of 100 fF while drawing a supply current of less than 1 mA when the output is low. What is the fastest risetime that the circuit can achieve? Assume the output low level is nearly zero. 2. In a CMOS inverter, (W/L)1 = 2/0.18 and (W/L)2 = 3/0.18. Determine the trip point of the circuit and the supply current drawn at this point.
A CMOS inverter is to be designed to drive a single TTL inverter . When vO = VL , the CMOS inverter must sink a current of 1.5 mA and maintain VL ≤0.6 V.When vO ≥ VH , the CMOS inverter must source a current of 60 A and maintain VH ≥2.4 V. What are the minimum W/L ratios of the NMOS and PMOS transistors required to meet these specifications?Assume VDD = 5 V.
We know that body effect deteriorates the behaviorof NMOS logic gates with depletion-mode loads.Assume that the depletion-mode load device hasVT O = −1 V and is operating in an inverter circuit with VDD = 2.5 V. What is the largest valueof the body-effect parameter γ that still will allowVO H = VDD? Assume 2φF = 0.6 V.
The graph gives the results of aSPICE simulation of an inverter. (a) What are therise and fall times for vI and vO ? (b) What are thevalues of τPHL and τPLH ? (c) What is the averagepropagation delay for this gate? (d) What will be theaverage propagation delay if the load capacitanceis doubled?
Design an asymmetrical inverter to meet the delay of 250 ps for a load capacitance of 120 fF. Use VDD =1.5V, VTN =0.50 V, and VTP =−0.50 V. with (W/L)P = (W/L)N .
(a) What is the power-delay product for the symmetrical reference inverter in Fig. operating from VDD = 2.5 V and driving an average load capacitance of 100 fF? (b) Repeat for a 3.3-V supply. (c) Repeat for a 1.8-V supply.
Given Vdd=3.3V, Kn=100uA/V2 , Kp=20uA/V2,Vtn = 0.6V, and Vtp = -0.6V. Determine the Voltage Transfer Characteristics points indicated by the pseudo-NMOS inverter circuit.
Estimate the static power dissipation of the inverter shown for vO = VHand vO = VL. What value of RC is required to reduce the power dissipation by a factor of 10?
(a) The n-well in a CMOS process covers an area of 1 cm× 0.5 cm, and the junction saturation current density is 500 pA/cm2. What is the total leakage current of the reverse-biased well? (b) Suppose the drain and source regions of the NMOS and PMOS transistors are 2µm × 5µm, and the saturationcurrent density of the junctions is 100 pA/cm2. If the chip has 20 million inverters, what is the total leakage current due to the reverse-biased junctions when vO =2.5 V? Assume VDD =2.5 V and VSS =0 V. (c) When vO =0 V?
Design a reference inverter to achieve a delay of 250 ps when driving a 0.2-pF load using a 3.3-V power supply. Assume that the threshold voltages of the CMOS technology are VTN = −VTP = 0.75 V.what W/L ratios are required to actually achieve an average propagation delay of 250 ps?