3. In a semiconductor which of the following carries can contribute to the current? a) Electrons b) Holes c) Both d) None
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- Give two common semiconductors used in electronics and provide the Barrier Potential each of it.How do I calculate the conductivity of a pure Ge semiconductor sample at 300K? Given that the free electron concentration is 2.46x1013cm-3 and electron mobility is 3900cm2.Which of the following statements is false? A. We can create an extrinsic semiconductor materials by adding impurities to an intrinsic semiconductors. B. A pentavalent impurity addition to an intrinsic semiconductor gives N-type semiconductor. C. N-type semiconductor has more holes than the free electrons that contribute to the conduction of current. D. The P-type semiconductors have more holes than the free electrons.
- In a silicon semiconductor, aluminum material is added. a) What are the majority and minority charge carriers in the resultant semiconductor? b) Why is the resultant semiconductor still electrically neutral?(i) In an intrinsic semiconductor, the electrical conductivity takes into account the contribution of electron and hole current. (ii) Furthermore, every electron that is promoted across the band gap leaves behind a hole in the valence band, that is, n = p = ni. The above statements are: A. True B. False D. No idea C. Neither True nor False E. Cannot be determined Other:A uniform piece of n-type Silicon (Si) is 20 nm long and 1 V voltage is applied across it. If the drift velocity of the electrons inside this semiconductor is 2.5x104 m/s, then estimate the mobility of the electrons.
- For pure germanium and pure silicone, the following statements are considered: 1. Direct-band interval semiconductors 2. Indirect-band interval semiconductors 3. Degenerated semiconductors Which of these statements are correct?A noncontributory semiconductor has some holes in room temperature. What causes these holes?Please select one:a.Valuation electronsb.Dopingc.Free electronsd.Thermal energyIf silicon (Si) germanium (Ge) , and tin * (Sn) Dobereiner , predict values that will are classified as a triad similar to those of the following table . Record the values in the
- Find the Voltage Output of the Circuit below using the 2nd Approximation. Consider the Diode (D1) as Silicon and Diode (D2) as Germanium. Find the Voltage Drop across Resistor R1 of the Circuit below using the 2nd Approximation Find the Total Current in mA of the Circuit below using the 2nd Approximation.Can I compare the Hall coefficient of a semiconductor I am using to another sample of the same element and type (p-type)? I have read that the Hall coefficient is dependent on the dimensions of the sample so in this case, it wouldn't be comparable. I would appreciate any guidance as i am still unsure.An n-type semiconductor sample has an electron density of 6.25x10^18/cm^3 at 300K.If the additive-free concentration of the carriers is 2.5x10^13/cm^3, what is the hole density at this temperature?