A small concentration of minority carries are injected into a homogeneous semiconductor crystal at one point. An electric field of 10 V/cm is applied across the crystal and this moves the minority carriers by a distance of 1 cm in 20 ms. What will be the mobility of the minority carriers?

Power System Analysis and Design (MindTap Course List)
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Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
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Chapter4: Transmission Line Parameters
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Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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A small concentration of minority carries are injected into a homogeneous semiconductor crystal at one point. An electric field of 10 V/cm is applied across the crystal and this moves the minority carriers by a distance of 1 cm in 20 ms. What will be the mobility of the minority carriers?

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