1) It is given as un = 1350 cm2 / Vs and up = 480 cm2 / Vs in a silicon semiconductor at T = 300K temperature. NA= 2x1015 cm-3 ND= 2x1017 cm3 calculate the specific resistance and specific conductivity values of the semiconductor

Power System Analysis and Design (MindTap Course List)
6th Edition
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Chapter4: Transmission Line Parameters
Section: Chapter Questions
Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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1) It is given as un
1350 cm2 / Vs and up = 480 cm2 / Vs in a silicon semiconductor at T =
%3D
%3D
mwv w
w mw m m
300K temperature.
NA= 2x1015 cm3
ND= 2x1017 cm 3
calculate the specific resistance and specific conductivity values of the semiconductor
w w w m wmw
Transcribed Image Text:1) It is given as un 1350 cm2 / Vs and up = 480 cm2 / Vs in a silicon semiconductor at T = %3D %3D mwv w w mw m m 300K temperature. NA= 2x1015 cm3 ND= 2x1017 cm 3 calculate the specific resistance and specific conductivity values of the semiconductor w w w m wmw
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