5. the circuits below, Ig is a positive DC current. M,, M2 and M3 are identical n-channel MOSFETS. Their body terminals are grounded, and the body effect is ignored. For the given circuit Mą must be operating in e MOSFET connections, explain why M, must be operating in the saturation region the saturation region ), and M2 must be operating in the linear region parameters are not needed to answer this question.] VDD VDD M3 M1 M2

5. the circuits below, Ig is a positive DC current. M,, M2 and M3 are identical n-channel MOSFETS. Their body terminals are grounded, and the body effect is ignored. For the given circuit Mą must be operating in e MOSFET connections, explain why M, must be operating in the saturation region the saturation region ), and M2 must be operating in the linear region parameters are not needed to answer this question.] VDD VDD M3 M1 M2

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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2. We discussed in class how the channel capacitance can be modeled in different region of operations in MOSFETs. For your reference, the slide is shown below. Explain how you think the model would look like if a transistor is in velocity saturation region? Channel Capacitances Channel capacitance is a voltage dependent and non-linear capacitance S C P-sub Bulk Cutoff Region D Operation Region Cutoff Linear Saturation S P-sub Bulk C Linear Region CGBCH CoxWLeff 0 0 1 2 3 S P-sub Bulk Saturation Region CGSCH 0 сат CoxWL eff 1 2 CGDCH 0 CoxWLoft CoxWLoff eff D 0
By doing circuit analysis (theoretical analysis) and using the resistances and voltage nominal values, determine the theoretical values for Vrl, Irl, Vth, and Rth.
For many years, MOS devices were scaled tosmaller and smaller dimensions without changingthe power supply voltage. Suppose that the widthW, length L, and oxide thickness Tox of a MOS transistor are all reduced by a factor of 2. Assume thatVT N , vGS, and vDS remain the same. (a) Calculatethe ratio of the drain current of the scaled device tothat of the original device. (b) By what factor hasthe power dissipation changed? (c) By what factorhas the value of the total gate capacitance changed?(d) By what factor has the circuit delay Tchanged?
For the transistor , IS = 6×10−16 μA,αF = 0.985, and αR = 0.25. (a) What type oftransistor is in this circuit? (b) Label the collector, base, and emitter terminals of the transistor.(c) Label the emitter-base and collector-base voltages, and label the normal direction for IE , IC, andIB. (d) Write the simplified form of the transportmodel equations that apply to this particular circuitconfiguration. Write an expression for IE /IC. Writean expression for IE /IB. (e) Find the values of IE ,IC, IB, βF , βR, VE B, and VC B.
circuit shown in the figure, Kn = 2mA / V2, VIN = 0.7V for Mi mosfeti. So, what kind of relationship should there be between R1 and R2 resistance for mosfet to work at saturation?
The channel resistance of a MOSFET can be computed by getting the reciprocal of the derivative of the drain current with respect to the drain to source voltage. Compute the channel resistance (in Ω) of an NMOS operating in the linear region given the following MOSFET specifications: k = 2.39μA/V2, W/L = 157, VGS = 4V, VTH = 0.90V, and VDS = 0.24V.
5- a-) Define the MOSFET in the figure, explain by drawing its input and output circuit characteristics.b-) Since k=0.1 mA/V2, VGS=5V and VT=2.5V for this MOSFET, find the VDS voltage using the circuit.
Design a four-resistor bias network for a pnptransistor to give IC = 850 μA, VEC = 2 V, andVE = 1 V if VCC = 5 V and βF = 60. (b) Replaceyour exact values with the nearest values from theresistor and find the resultingQ-point.
With your knowledge and understanding in MOSFET , explain electrically with graph supporting your answers , the three regions of operation of a MOSFET
For an n-channel depletion-mode MOSFET, in the saturation region ID = 8mA when VGS = 0, and the dynamic (incremental) output resistance r0 is infinite. The threshold voltage (or pinch-off voltage) is VTR = VP = –2.5V. For VGS = 0, find the smallest value of VDS at which the MOSFET is in saturation. For VDS equal to this value, find ID when (i) VGS = –1V, (ii) VGS = –2V, (iii) VGS = –3V, (iv) VGS = –4V.
find the overall trasnfer function and range of k to make the system stable
Sketch all applicable depletion regions for an n-channel MOSFET when the source and drain remain grounded, but an appropriate voltage is applied to the gate to induce a channel.