5. We are given an n-channel CMOS gate that looks like a capacitor with two parallel dielectriclayers as shown below;diVC2:E2(a) Calculate V, and V2 when a total voltage V is applied across the gate.(b) Calculate E, and E2 from V, and V2.(c) Calculate the energy stored by each of the dielectric layers and then use the sum of thetwo to calculate a Ctot.(d) Show that the total capacitance can be written as;C, C2CtotC1 + C2%3Dwhere,€q AC1 =d1€2AC1d2and(e) The CMOS gate is 8 um wide and 0.8 um long. For an oxide (eox = 3.8) that is 8 nmthick and Si depletion channel (Esi = 11.7) 10 nm deep when 3.3 Volts is applied, whatare C, and C2? What is the total energy stored in this gate?

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5. We are given an n-channel CMOS gate that looks like a capacitor with two parallel dielectric layers as shown below; (a) Calculate Vị and V2 when a total voltage V is applied across the gate. (b) Calculate E¡ and E, from V, and V2. (c) Calculate the energy stored by each of the dielectric layers and then use the sum of the two to calculate a Crot-

5. We are given an n-channel CMOS gate that looks like a capacitor with two parallel dielectric layers as shown below; (a) Calculate Vị and V2 when a total voltage V is applied across the gate. (b) Calculate E¡ and E, from V, and V2. (c) Calculate the energy stored by each of the dielectric layers and then use the sum of the two to calculate a Crot-

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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When should the 2 equations be used? when I tried solving for the Gms of two cascaded Nmos , the same values were obtained when I used the second equation, however, when I used the first equation, the Gm of the two mosfets were different since their VGS is different. Which one should I go for?
For the transistor , IS = 4 × 10−16 μA,βF = 75, and βR = 4. (a) Label the collector, base,and emitter terminals of the transistor. (b) What isthe transistor type? (c) Label the emitter-base andcollector-base voltages, and label the normal direction for IE , IC, and IB. (d) Write the simplified formof the transport model equations that apply to thisparticular circuit configuration. Write an expressionfor IE /IB. Write an expression for IE /IC. (e) Findthe values of IE , IC, IB, VC B, and VE B.
In the circuits , the Zener breakdown voltages of the collector-base and emitterbase junctions of the npn transistors are 40 V and6.3 V, respectively. What is the current in the resistor in each circuit? (Hint: The equivalent circuitsfor the transport model equations may help in visualizing the circuit.)
For many years, MOS devices were scaled tosmaller and smaller dimensions without changingthe power supply voltage. Suppose that the widthW, length L, and oxide thickness Tox of a MOS transistor are all reduced by a factor of 2. Assume thatVT N , vGS, and vDS remain the same. (a) Calculatethe ratio of the drain current of the scaled device tothat of the original device. (b) By what factor hasthe power dissipation changed? (c) By what factorhas the value of the total gate capacitance changed?(d) By what factor has the circuit delay Tchanged?
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(a) What W/L ratios are required for the NMOS and PMOS transistors to achieve a propagation delay of 0.71 ns for the VSAT = 1 V case in Table ? (b) What W/L ratios are required for the NMOS and PMOS transistors to achieve rise and fall times of 1.58 ns for the VSAT = 1 V case?
Suppose we need an NMOS transistor for which iD=2 mA when vGS=vDS=5 V. Process constraints result in KP=50 μA/V2 and Vto=1 V. Determine the width-to-length ratio needed for the transistor. If L=2 μm what is the value of W?
For the transistor , IS = 6×10−16 μA,αF = 0.985, and αR = 0.25. (a) What type oftransistor is in this circuit? (b) Label the collector, base, and emitter terminals of the transistor.(c) Label the emitter-base and collector-base voltages, and label the normal direction for IE , IC, andIB. (d) Write the simplified form of the transportmodel equations that apply to this particular circuitconfiguration. Write an expression for IE /IC. Writean expression for IE /IB. (e) Find the values of IE ,IC, IB, βF , βR, VE B, and VC B.
(a) What is the base-emitter voltage in the circuitshown? Use the transport equations and thetransistor parameters from Table shown (b) What isthe base-emitter voltage if βF = 80? (c) What isVBE if IB is increased to 1 mA and βF = 40?
An N-channel MOSFET with N+-poly gate is fabricated on a 15 n. cm P-type Si wafer (a) Determine the flat-band voltage Vfb. (b) What is the threshold voltage, Vt? (c) A circuit designer requested N-MOSFET with Vt = 0.5 V from a device engineer. It was not allowed to change the gate oxide thickness. If you are the device engineer, what can you do? Give specific answer.; including what type of equipment to use.
Q3 Draw the structures of NMOS and PMOS transistors showing the different materials, terminals, and dimensions. Full explain this question and text typing work only thanks
In your own words, on the qualitative operation of both an NMOS and a PMOS transistor for accumulation, depletion, and inversion (triode and saturation). One paragraph should be on the NMOS transistor, one paragraph on the pMOS transistor.