9.38 For a version of the CE amplifier circuit in Fig. P9.11, Rsig = k2, and R, = 10 k2. The collector current is 0.8 mA, ß= 200, fr=1 GHz, and C,=0.8 pF. Neglecting the effect of r, and r, find the midband voltage gain and the upper 3-dB frequency 10 k2, R, = 68 k2, R, = 27 k2, Rp = 2.2 k2, R. = 4.7 Ris 7.

9.38 For a version of the CE amplifier circuit in Fig. P9.11, Rsig = k2, and R, = 10 k2. The collector current is 0.8 mA, ß= 200, fr=1 GHz, and C,=0.8 pF. Neglecting the effect of r, and r, find the midband voltage gain and the upper 3-dB frequency 10 k2, R, = 68 k2, R, = 27 k2, Rp = 2.2 k2, R. = 4.7 Ris 7.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

for the BJT circuit shown with ( β = 120) determine low cutoff frequencies and what isthe effective low cutoff frequency
Please answer immediately, I'll give an upvote. Thanks. A common emitter amplifier, with the circuit shown in the image, is designed to have a Bode magnitude and phase frequency response as shown by the graphs. The BJT has the following parameters: β = 100, VA → ∞, Cπ = 500fF, and Cμ = 10fF. Use VT = 26mV, RC = 10kΩ and note that the capacitor CX is an external capacitor used to achieve the desired frequency response. For the circuit shown, use β = 200, RB = 1kΩ, RC = 2kΩ, RE = 4kΩ, VBE,on = 0.7V, VCE,sat = 0.2V, VCC = 10V, VEE = -10V. What should be the quiescent collector current of the transistor?
Answer ASAP, thank you. I'll upvote if correct. A common emitter amplifier, with the circuit shown in the image, is designed to have a Bode magnitude and phase frequency response as shown by the graphs. The BJT has the following parameters: β = 100, VA → ∞, Cπ = 500fF, and Cμ = 10fF. Use VT = 26mV, RC = 10kΩ and note that the capacitor CX is an external capacitor used to achieve the desired frequency response. For the circuit shown, use β = 200, RB = 1kΩ, RC = 2kΩ, RE = 4kΩ, VBE,on = 0.7V, VCE,sat = 0.2V, VCC = 10V, VEE = -10V. Write the generalized form of the amplifier’s transfer function, A(ω) = (Vout/Vin)(ω).
For a mosfet amplifier circuit, how can I choose an input and output capacitor with poles at 10Hz and 100Hz? Where RC = 1/w.
What are the center frequency, Q, and midband gain for the amplifier as shown if the FET has CGS = 40 pF, CGD = 5 pF, λ = 0.0167 V−1, and it is biased at 2 V above threshold with ID = 10 mA and VDS = 10 V.
When a high-frequency transconductance amplifier whose output resistance is 100 kΩ isconnected to a load capacitor, the measured 3-dB bandwidth of the amplifier is reduced from 5 MHzto 100 kHz. Estimate the value of the load capacitor. If the original cutoff frequency can be attributedto a small parasitic capacitor at the output node (i.e., between the output and ground), what would youestimate it to be?
What is the voltage gain (Av) of the circuit when β = 100, r0 = 40 kΩ, RB = 360 kΩ, RC = 3.3 kΩ, RE = 220 Ω, Rs = 15 kΩ and RL = 248 kω in the circuit given in the figure?Note-1: the output impedance of the transistor r0 will be taken into account in calculations.Note-2: capacitors are negligible at midband frequency.
The circuit as shown has CL = 10 pF and R = 7.5 kΩ, and the transistor parameters are CGS = 8 pF, CGD = 3 pF, and gm = 3 mS. (a) What is the bandwidth of the amplifier? (b) Find the value of L required to extend thebandwidth to the maximally flat limit. What is the new bandwidth?
fT = 500 MHz, rx = 300 Ω, Cμ = 0.75 pF, CGS = CGD = 2.5 pF. (a) What are the midband gain and upper-cutoff frequency for the common-emitter amplifier (a) if IC = 1 mA and βo = 100? (b) What is the gain bandwidth product for this amplifier? (c) What is the value of the current gain of the transistor at f = fH ? Make use of the CT approximation.
Given an amplifier with an effective noise temperature of 10,000 K and a 10-MHzbandwidth, what thermal noise level, in dBW, may we expect at its output?
Find the midband gain and the frequencies of the poles and zeros of the commonemitter amplifier as shown if the transistor has fT = 500 MHz, but Cμ = 1 pF.
(a) What is the value of C required for fo = 10.7 MHz in the circuit as shown if IC = 10 mA, VCE = 10 V, βo = 100, Cμ = 1.75 pF, fT = 500 MHz, and VA = 75 V? (b) What is the Q of the amplifier? (c) Where should a tap be placed on the inductor to achieve a Q of 100? (d) What is the new value of C required to achieve fo = 10.7 MHz?