a) An n-channel MOS is fabricated with the following parameters: Substrate doping density NA = 2.4 - 1018 cm-3 %3D • p* channel stop implant, N (chan. stop) = 2 x 1020 cm-3 %3D Gate oxide thickness tox = 18Å Source and drain diffusion doping density, Np = 2.4 1018 cm-3 The junction depth of the source and drain diffusion regions, x, = 32nm Width of the Junction, W = 400nm • Length of Junction, Y = 175nm Channel Length, L = 60nm Overlap Channel Length, Lp = 0.01um Determine the drain diffusion capacitance for VDe = 1.2V and VDR = 0.6V.

a) An n-channel MOS is fabricated with the following parameters: Substrate doping density NA = 2.4 - 1018 cm-3 %3D • p* channel stop implant, N (chan. stop) = 2 x 1020 cm-3 %3D Gate oxide thickness tox = 18Å Source and drain diffusion doping density, Np = 2.4 1018 cm-3 The junction depth of the source and drain diffusion regions, x, = 32nm Width of the Junction, W = 400nm • Length of Junction, Y = 175nm Channel Length, L = 60nm Overlap Channel Length, Lp = 0.01um Determine the drain diffusion capacitance for VDe = 1.2V and VDR = 0.6V.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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