A silicon p-n junction (n = 1010 cm-3, Na = 1017 cm-3 and Na = 4 x 1016 cm3) is biased with an applied voltage Va = -5 V. Calculate the built-in potential, the depletion layer width and the depletion capacitance. Take the temperature as 27°C. %3D %3D

A silicon p-n junction (n = 1010 cm-3, Na = 1017 cm-3 and Na = 4 x 1016 cm3) is biased with an applied voltage Va = -5 V. Calculate the built-in potential, the depletion layer width and the depletion capacitance. Take the temperature as 27°C. %3D %3D

Glencoe Physics: Principles and Problems, Student Edition

1st Edition

ISBN:9780078807213

Author:Paul W. Zitzewitz

Publisher:Paul W. Zitzewitz

Chapter29: Solid-state Electronics

Section29.1: Conduction In Solids

Problem 17PP

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Question

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A silicon p-n junction (ni = 1010 cm3, Na = 1017 cm-3 and Nd = 4 x 1016 cm 3) is
biased with an applied voltage Va = -5 V. Calculate the built-in potential,
the depletion layer width and the depletion capacitance. Take the
temperature as 27°C.

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