A simple Ge n-i-n photo-detector sample has a length of L = 30 µm and a hole lifetime of t, = 0.4 us. If a voltage of 2 V is appliedacross the detector length, at 300 K the detector gain at the applied voltage will be:O a. 515.5O b. 1056O c. 0O d. 680.0O e. 0.3552 Prof. O M KhreisМay 2, 2020: Si, Ge, GaAs Parameters and Universal ConstantsUNIVERSAL CONSTANTSPropertiesSEMICONDUCTOR6.63 × 10-349.11 x 10-31 KghJ.sSiGeGaAsm.E, (eV)ni (ст-3)Hn (ст?/V — s)Mp (ст? /V — s)Ne (cm-3)Ny (cm-3)m/m.1.10.671.423.141.5 x 10102.3 x 10131.8 x 1061.602 x 10-19 C150039008500F/mEo8.85 x 10-1245019004001.05 x 10-348.6 x 10-5 eV/KJ1.04 x 1019 | 4.45 × 10176 × 10182.78 x 1019K9.84 × 10187.72 × 1018KT/q26 mV (T 3 300 К)26 meV (T = 300 K)0.0820.980.067KTmi/m.Er (F/m)0.280.490.453 x 10° m/s11.71613.1Nair = 1nGaAs =3.66%3DSome useful relationsEgALGa1–2As(x) = 1.424 + 1.247xEgIn,Ga1-,As(x) = 0.36 + 1.064x1 eV = 1.602 × 10¬19 J1 KG = 1 × 10-5 wb/cm²

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A simple Ge n-i-n photo-detector sample has a length of L= 30 µm and a hole lifetime of t, = 0.4 µs. If a voltage of 2 V is applied across the detector length, at 300 K the detector gain at the applied voltage will be: O a. 515.5 O b. 1056 О с.0 O d. 680.0 О е. 0.3552

A simple Ge n-i-n photo-detector sample has a length of L= 30 µm and a hole lifetime of t, = 0.4 µs. If a voltage of 2 V is applied across the detector length, at 300 K the detector gain at the applied voltage will be: O a. 515.5 O b. 1056 О с.0 O d. 680.0 О е. 0.3552

College Physics

1st Edition

ISBN:9781938168000

Author:Paul Peter Urone, Roger Hinrichs

Publisher:Paul Peter Urone, Roger Hinrichs

Chapter29: Introduction To Quantum Physics

Section: Chapter Questions

Problem 1PE: A LiBr molecule oscillates with a frequency of 1.701013 Hz. (a) What is the difference in energy in...

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