Light of wavelength 650 nm and power 2 mW is incident on a semiconductor photodiode with an absorbing layer of thickness 2.65. um. Assume that 1 % of power is lost on reflection at the surface and the absorption coefficient at this wavelength is 10 cm. What will be the absorbed power? (a) 160 uW (b) 198 µW (c) 145 µW (d) 184 uW

Modern Physics
3rd Edition
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Chapter12: The Solid State
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Light of wavelength 650 nm and power 2 mW is incident on a semiconductor photodiode
with an absorbing layer of thickness 2.65. um. Assume that 1 % of power is lost on
reflection at the surface and the absorption coefficient at this wavelength is 10 cm . What
will be the absorbed power?
(a) 160 µW
(b) 198 µW
(c) 145 uW
(d) 184 uW
Transcribed Image Text:Light of wavelength 650 nm and power 2 mW is incident on a semiconductor photodiode with an absorbing layer of thickness 2.65. um. Assume that 1 % of power is lost on reflection at the surface and the absorption coefficient at this wavelength is 10 cm . What will be the absorbed power? (a) 160 µW (b) 198 µW (c) 145 uW (d) 184 uW
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