QUESTION:3 A special semiconductor material is to be "designed". The semiconductor is to be n- type and doped with 1x 10 cm donor atoms. Assume complete ionization and that Na=0. The effective density of state functions are given by Nc = Nv =1.5 x 10" cm and are independent of temperature. A particular semiconductor device fabricated with this material requires the electron concentration to be no greater than 1.01 x 10" cm at T=400K. What is the minimum value of the band gap energy?

QUESTION:3 A special semiconductor material is to be "designed". The semiconductor is to be n- type and doped with 1x 10 cm donor atoms. Assume complete ionization and that Na=0. The effective density of state functions are given by Nc = Nv =1.5 x 10" cm and are independent of temperature. A particular semiconductor device fabricated with this material requires the electron concentration to be no greater than 1.01 x 10" cm at T=400K. What is the minimum value of the band gap energy?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

conducting line on an IC chip is (2.8 mm) long, and has a rectangular cross-section (1x 4 um). A current of (5 mA) produces a voltage drop of (100 mV) across the line. Determine the electron concentration given that the electron mobility is (500 cm²/V.Sec.).
Boron atoms are added to a Si film resulting in an impurity density of 4 × 10^16 cm^–3.(a) What is the conductivity type (N-type or P-type) of this film?(b) What are the equilibrium electron and hole densities at 300 K and 600 K?(c) Why does the mobile carrier concentration increase at high temperatures?(d) Where is the Fermi level located if T = 600 K?
Suppose the hole concentration in silicon sampleis described mathematically by p(x) = 105+1019 exp(− x/ Lp) holes/cm3, x ≥ 0 in which Lp is known as the diffusion length for holes and is equal to 2.0 μm. Find the diffusion current density for holes as a function of distance for x ≥ 0 if Dp = 15 cm2/s. What is the diffusion current at x = 0 if the cross-sectional area is 10 μm2?
Find the electric field (magnitude and direction) at the point P for the following 3-charge configuration, where Q= +1nC and a=2cm. Show detailed work and a free body diagram.
Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration of (1×1016electron/m³) with the doping concentration of (2×1016atoms/m³) of the phosphorus and (1×1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s), the mobility for the holes (0.05m2/V.s), the electric field (100V/m), and the cross section area is 1mm?.
The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ
Hall measurement is conducted on a silicon sample of unknown doping with W= 100cm, A = 2.5 × 10-3cm2, I = 2 mA and the magnetic field is 500 Gauss. If the Hall voltage of +150mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity and mobility of the semiconductor sample.
A silicon sample at room temperature is doped with gallium (Ga) from one side such that Ndoping=38.85x1015e−x/α , α = 0.5 µm, and Ndoping >> ni. Calculate the electric field at x= 1µm.
What semiconductor materials would be more suitable for a single junction pv device for ground or roof based applications using absorption data for four semiconductor materials. Assume typical solar spectrum AM 1.5, and that materials have comparable absorption coefficients. 2. Based on data, can you suggest a photovoltaic devices with higher conversion efficiency than the one discussed in number 1? Explain your answer
In a n-type semiconductor, the electron concentration increases linearly along the x-axis from 10^16 cm^-3 at x=0 (point A) to 5x10^20 cm^-3 at x=0.5cm (point B). In the absence of any external applied electric field, estimate the approximate diffusion current density and its direction (A to B or B to A). Assume that the electron diffusion constant, Dn = 10cm^2/s.
Consider germanium Ge and GaAs material. Which material has lower intrinsic carrier concentration ni at a fixed temperature and what is the principal reason for that? Don,t copy from anywhere.Answer follow question step by step.
The electron number density in a semiconductor varies from 1020 m-3 to 1012 m-3 linearly over a distance of 4 μ Determine the electron diffusion current and electric field at the midpoint if no current flows, μе = 0.135 m2V-1s-1 and T = 300 K.