i need the answer quickly Calculate the drift current density in (mA/m2) for the silicon at roomtemperature. If the intrinsic carrier concentration of (2x1016electron/m³) withthe doping concentration of (3x1016atoms/m³) of the phosphorus and(2x1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s)and thé mobility for the holes (0.05m2/V.s) and the electric field (100V/m).O 85.75O 72.72O 62.7782.77O 80.77

Given: If the intrinsic carrier concentration of: ni=2×1016 electron/m3 with the doping…

Answered: Calculate the drift current density in…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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You are given an intrinsic silicon at "some" temperature. Assume that the intrinsic Fermi level, E, is exactly at the middle of the of the conduction band edge, Ec, and the valence band edge, Ev. It is known that the Fermi-Dirac probability for electrons at the conduction band edge is fe(E) = 5×102 at the unknown temperature. 1. What is the probability to find holes fh(Ec) at the conduction band edge?2. What is the Fermi-Dirac probability for electrons at the valence band edge, fe(Ev)?3. What is the Fermi-Dirac probability for holes at the valence band edge, fh(Ev)?
You are given an intrinsic silicon at "some" temperature. Assume that the intrinsic Fermi level, E, is exactly at the middle of the of the conduction band edge, Ec, and the valence band edge, Ev. It is known that the Fermi-Dirac probability for electrons at the conduction band edge is fe(E) = 5×102 at the unknown temperature. 1.What is the Fermi-Dirac probability for electrons at the intrinsic Fermi level, fe(Ei)?
A silicon sample is supporting an electric ﬁeld of −1500 V/cm, and the mobilities of electrons and holes are 1000 and 400 cm2/V·s, respectively. What are the electron and hole velocities? If p=1017/cm3 and n=103/cm3, what are the electron and hole current densities?
A 100Ω resistor is to be made at room temperature in arectangular silicon bar of 1 cm in length and 1mm 2 in cross sectionalarea by doping it appropriately with phosphorous atoms. If theelectron mobility in silicon at room temperature be 1350 cm 2 /V-second. Calculate the dopant density needed to achieve this. Neglectthe insignificant contribution by the intrinsic carriers.
The carrier mobility of an organic semiconductor layer can be measured by the time-of-flight (TOF) photoconductivity measurement. Fig.1(a) is a schematic diagram of the TOF set-up, and Fig.1 (b) is the typical TOF transient measured for a 10 μm thick NPB film sandwiched between an ultrathin Al cathode and an ITO anode. From the constant current plateau in the TOF measurement, as shown in Fig.1(b), the transit time thus obtained for the NPB sample is 9 μs. (a) Calculate the carrier mobility in NPB layer. (b) Explain what type of the carriers, i.e., hole or electron mobility, was measured in the experiment.
GaAs and GaP make solid solutions that have the samecrystal structure as the parent materials, with As and P randomlydistributed throughout the crystal. GaPxAs1 - x existsfor any value of x. If we assume that the band gap varies linearlywith composition between x = 0 and x = 1, estimatethe band gap for GaP0.5As0.5. (GaAs and GaP band gaps are1.43 eV and 2.26 eV, respectively.) What wavelength of lightdoes this correspond to?
Silicon cylinder of radius r = 1 cm carries a current of 100 mA at roomtemperature.What is the intrinsic carrier (electrons n and holes p) drift speed?
A semiconductor has a bandgap of 2 eV and effective densities of states of Nc = 1019/cm3 and Nv = 5x1018/cm3. If this semiconductor is doped with 1017donors/cm3 (fully ionized), calculate the hole, electron, and intrinsic carrier concentrations at 600C. Sketch the band diagram and indicate the position of EF.
Suppose the hole concentration in silicon sampleis described mathematically by p(x) = 105+1019 exp(− x/ Lp) holes/cm3, x ≥ 0 in which Lp is known as the diffusion length for holes and is equal to 2.0 μm. Find the diffusion current density for holes as a function of distance for x ≥ 0 if Dp = 15 cm2/s. What is the diffusion current at x = 0 if the cross-sectional area is 10 μm2?
A diffused silicon PN junction has a linearly graded junction in the P-side with ?=10^19cm−3, and a uniform doping of 3×10^14 cm−3on the N-side. If the depletion layer width of the P-side is 0.8μm at zero bias, find the total depletion layer width, built-in potential, maximum field at zero bias and sketch the potential distribution.
A 10KQ resistor is made of two strips connected in parallel, each one has 40µm thick, and 6mm long, one strip is of intrinsic germanium and has 0.5mm wide. Determine the width of other strip if it made of Ge., doped with 10 21 donor atom/cm ,at the working temperature. The intrinsic carrier density of Ge is 2.5 x 1019 m3, and the electron and hole mobilities are 0.4 m2 N.sec. and 0.2 m? N.sec. respectively.
Calculate the intrinsic carrier densities in silicon and germanium at (a) 77K, (b) 300K, and (c) 450K. Use the information from the table shown.

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