An abrupt silicon pn junction has trivalent dopant concentrations of Na = 1x1015 cm3. If the built in potential at room temperature is 0.711 V, Find out the concentration of Na- Calculate the values of Xp and x, Calculate the width of the space-charge layer when a reverse voltage of Vg=-10V is applied. Calculate the peak electric field for junction voltages when a reverse voltage of VR=-10V is applied. Explain the effect of dopant concentration on the space charge region? Maximur

An abrupt silicon pn junction has trivalent dopant concentrations of Na = 1x1015 cm3. If the built in potential at room temperature is 0.711 V, Find out the concentration of Na- Calculate the values of Xp and x, Calculate the width of the space-charge layer when a reverse voltage of Vg=-10V is applied. Calculate the peak electric field for junction voltages when a reverse voltage of VR=-10V is applied. Explain the effect of dopant concentration on the space charge region? Maximur

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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A diffused silicon PN junction has a linearly graded junction in the P-side with ?=10^19cm−3, and a uniform doping of 3×10^14 cm−3on the N-side. If the depletion layer width of the P-side is 0.8μm at zero bias, find the total depletion layer width, built-in potential, maximum field at zero bias and sketch the potential distribution.
Hall measurement is conducted on a silicon sample of unknown doping with W= 100cm, A = 2.5 × 10-3cm2, I = 2 mA and the magnetic field is 500 Gauss. If the Hall voltage of +150mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity and mobility of the semiconductor sample.
You are given an intrinsic silicon at "some" temperature. Assume that the intrinsic Fermi level, E, is exactly at the middle of the of the conduction band edge, Ec, and the valence band edge, Ev. It is known that the Fermi-Dirac probability for electrons at the conduction band edge is fe(E) = 5×102 at the unknown temperature. 1. What is the probability to find holes fh(Ec) at the conduction band edge?2. What is the Fermi-Dirac probability for electrons at the valence band edge, fe(Ev)?3. What is the Fermi-Dirac probability for holes at the valence band edge, fh(Ev)?
A semiconductor has a bandgap of 2 eV and effective densities of states of Nc = 1019/cm3 and Nv = 5x1018/cm3. If this semiconductor is doped with 1017donors/cm3 (fully ionized), calculate the hole, electron, and intrinsic carrier concentrations at 600C. Sketch the band diagram and indicate the position of EF.
A silicon sample is supporting an electric ﬁeld of −1500 V/cm, and the mobilities of electrons and holes are 1000 and 400 cm2/V·s, respectively. What are the electron and hole velocities? If p=1017/cm3 and n=103/cm3, what are the electron and hole current densities?
You are given an intrinsic silicon at "some" temperature. Assume that the intrinsic Fermi level, E, is exactly at the middle of the of the conduction band edge, Ec, and the valence band edge, Ev. It is known that the Fermi-Dirac probability for electrons at the conduction band edge is fe(E) = 5×102 at the unknown temperature. 1.What is the Fermi-Dirac probability for electrons at the intrinsic Fermi level, fe(Ei)?
Calculate the body-effect coefficient and the change in the threshold voltage due to an applied source-to-body voltage. Consider an n-channel silicon MOSFET at T = 300 K. Assume the substrate is doped to Na = 3×1016 cm−3 and assume the oxide is silicon dioxide with a thickness of tox = 20nm = 200A˚. Let VSB = 1V.
The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ
Assume a cylindrical diode, half P doped and half N doped. If the diode diameter is 100um, calculate the following: a) Junction capacitance for no external bias and ND = 1E16 atoms/cm3 and NA = 1E16 atoms/cm3 b) Junction capacitance for no external bias and ND = 1E17 atoms/cm3 and NA = 1E15 atoms/cm3 c) Junction capacitance for a 10V reversed voltage and ND = 1E17 atoms/cm3 and NA = 1E15 atoms/cm3 d) Junction capacitance for a 0.3V forward voltage and 1E16 atoms/cm3 and NA = 1E16 atoms/cm3
A silicon PN junction employs ND = 5 × 1017 cm−3 and NA = 4 × 1016 cm−3.(a) Determine the majority and minority carrier densities on both sides.(b) Calculate the built-in potential at T = 250 K, 300 K, and 350 K.(c) Repeat (a) and (b) if the p-side was not doped due to a manufacturing error.
A 100Ω resistor is to be made at room temperature in arectangular silicon bar of 1 cm in length and 1mm 2 in cross sectionalarea by doping it appropriately with phosphorous atoms. If theelectron mobility in silicon at room temperature be 1350 cm 2 /V-second. Calculate the dopant density needed to achieve this. Neglectthe insignificant contribution by the intrinsic carriers.
3. Consider a silicon with intrinsic carrier concentration ni of 1010 cm-3 at room temperature.It is then doped to p-type doping with a concentration of NA = 5x1017 cm-3. What is thelocation of the Fermi level relative to the conduction band? (Hint: NC = 2.8x1019 cm-3).