Calculate the junction depth and the total amount of dopant introduced after pre deposition process performed at 975° C using diborane gas for 60 minutes in a neutral ambient. Assume the substrate is n- type silicon with Np 7.2 x 1016 cm3 and the boron surface concentration is Cs 6 x 1019 cm3

Find the current I if both diodes are identical. Voltage V = 0.8V and let the reverse saturation current be 10-⁹A. D1 D2

Diode circuitsFor each circuit below, use the diode approximation with forward dropVF= 0.7 V to find the output voltage. No current flows to the output.

Calculate the reverse saturation current of a diode if the current at 0.2V forward bias is 0.1mA at a temperature of 25°C and the ideality factor is 1.5.

Calculate the reverse saturation current of a diode if the current at 0.2V forward bias is 0.1mA at a temperature of 25°C and the ideality factor is 1.5.

For each circuit, use the diode approximation with the forward drop equal to 0.7 V and determine Vout. +3 V 10 k - Vout -3 V ++3 V 10 k - Vout -3 V ++3 V 10 k 5 k -3 V Vout

Determine the negative resistance for the tunnel diode in the figure between ?T = 0.2 ? and ?T = 0.4