기)Figure on the right represents the electron and1600hole mobilities of silicon at 300 K. Find the electron andhole diffusion constants in a piece of silicon doped with 3 x14001015cm-3 of donors and 7 x 105cm3 of acceptors at 300 K.12001000800600400200101410510%10710N, + N (ions/cm')1019100Figure for question 7.Mobility (cm/V-s)

The carrier mobility (μn, μp) in a semiconductor reduces with doping concentration as shown in the…

7) Figure on the right represents the electron and hole mobilities of silicon at 300 K. Find the electron and hole diffusion constants in a piece of silicon doped with 3 x 1015cm- of donors and 7 x 101cm3 of acceptors at 300 K.

7) Figure on the right represents the electron and hole mobilities of silicon at 300 K. Find the electron and hole diffusion constants in a piece of silicon doped with 3 x 1015cm- of donors and 7 x 101cm3 of acceptors at 300 K.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Question

기)
Figure on the right represents the electron and
1600
hole mobilities of silicon at 300 K. Find the electron and
hole diffusion constants in a piece of silicon doped with 3 x
1400
1015cm-3 of donors and 7 x 105cm3 of acceptors at 300 K.
1200
1000
800
600
400
200
1014
105
10%
107
10
N, + N (ions/cm')
1019
100
Figure for question 7.
Mobility (cm/V-s)

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