Calculate the reverse current of P-N diode, if a forward current of 10mA is flowing through it if supplied with 0.7V at 26.5°C room temperature. Assume ideality factor, n=2. a. 3nA b. 2.56nA c 13.05nA d. 2.5nA

Calculate the reverse current of P-N diode, if a forward current of 10mA is flowing through it if supplied with 0.7V at 26.5°C room temperature. Assume ideality factor, n=2. a. 3nA b. 2.56nA c 13.05nA d. 2.5nA

Electric Motor Control

10th Edition

ISBN:9781133702818

Author:Herman

Publisher:Herman

Chapter59: Motor Startup And Troubleshooting Basics

Section: Chapter Questions

Problem 12SQ: How is a solid-state diode tested? Explain.

See similar textbooks

Related questions

Q: A Zener diode circuit is shown in Figure Q.1(b). Given Vz = 12 V, (i) Determine I, Vulh and lg…

A: Given Vz = 12 V Izmax = 15 m A. RLmax = Vz/ILmin RLmin = Vz /ILmax

Q: A silicon diode has a reverse saturation current of 1.17 nA and forward bias voltage of 0.4 V at a…

Q: Reg. No = 26 Calculate the forward current for the diode circuit as shown in the given figure,…

A: To find the forward current for the diode circuit

Q: The ideal diode is short in the region of conduction and an open circuit in the region of…

Q: By differentiating the rectifier equation for a junction diode, I = Io (e(eVapp/kT) - 1), determine…

A: I = Iοe(evm/KT)-1dIdV-1=RR=ddv[I∘exp(ev/KT)-1]=ekTI∘.exp(ev/kT)R=eI∘kT.exp(ev/kT)

Q: 2. For the given circuit solve the following: a. The current flowing through 200 and 5k0 resistors,…

A: Given: voltage of Ge diode = 0.3 V voltage of Si diode = 0.7 V

Q: 19 Actual commercially available unit 18 17 16+ Eq. (1.1 15 14 13+ 12 Defined polarity and direction…

A: Given data, Graph of the diode is given as,

Q: Consider given choices. Solve the current flowing to silicon diode of the given circuit below.

Q: The reverse recovery time of a diode is t,,= 6 μs, and the rate of fall of the diode current di/dt =…

A: Given- Reverse recovery time of diode trr=6 μs, Rate of fall of the diode current didt=10 A/μs,…

Q: 1. Determine the dynamic (ac) resistance of the diode at a forward current of 15 milliAmpere using…

A: consider thegiven question;

Q: Vi R. Given that Vi=20Vrms, V=5V Determine the peak Vo if the diode is ideal. V, 4 decimals

A: The solution is given below

Q: 4670V = Vs R = 200kΩ C = 0.1μF Consider the circuit and parameters illustrated above. If a…

Q: Using diode equation, find the p-n junction Germanium diode current for a forward bias of 0.2 V at…

Q: Load-line Analysis a.1 For the series diode configuration employing the diode characteristics given,…

A: as per our guidelines we are supposed to answer?️ only one question. Kindly repost other questions…

Q: When Vs=4290 Consider the circuit and parameters illustrated below.if a derating factor of 12% is…

A: Given, Vs=4290 V De-rating factor =DRF =12% =0.12 R=200 kΩ C=0.1 μF let , Ib = leakage current ∆Ib…

Q: Apply each of diode approximations given the following parameters: D1: Si, rB = 2 Q, rR = 220 k D2:…

Q: At 300 K for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0.1435 V,…

A: Solution: The diode equation is, I=I0evηVT-1 For Si: I1=I01ev1ηVT-1At 300 K VT=26 mV for Si,…

Q: A FWBR with an RL load is connected to a 120 V source. If the load resistance is 10 22 and L » R,…

Q: Q3/ Consider the circuit shown below with a transformer of 10:1 transformation ratio and the diodes…

Q: For the diode parameters given below = 1015atoms/cm³, Np = 1017atoms/cm³, A = 0.025cm², T = 300K, D,…

A: The Answer is

Q: (a) Consider a pn junction diode biased at Ipg = 1 mA. A sinusoidal volt- age is superimposed on Vpg…

A: Given Data: pn junction biased current IDQ = 1 mApeak to peak sinusoidal = 0.05 IDQThermal voltage…

Q: QUESTION 1 If we have silicon at 300K with 10 microns of p-type doping of 4.26*10^18/cc and 10…

A: Given: Length, L = 10 microns = 0.001 cm 10 microns of p type doping, p = 4.26×1018/cc 10 microns of…

Q: Consider the "Zener diode as a voltage regulator" circuit given below: 1502 D unregulated/ 12 volt…

A: For given Zener diode to operate in a breakdown region is necessary to operate in the reverse-biased…

Q: An abrupt silicon pn junction at zero bias has doping concentrations of NA=107 cm3 and Np=5x1015…

A: Dear student as per our guidelines we are supposed to solve only one question in which it should…

Q: A germanium diode has a forward current at 0.2 V forward bias is 0.1 mA at a temperature of 25°C,…

A: According to the question we have to find the value of ideality factor, Thermal Voltage, and…

Q: R1 Vx - Considering the given circuit, Vz = 6.5 V @ 4 mA, R1 = 0.5 kN, V = 12±3 V, and rz 25 N. If…

A: The minimum value of zener diode in breakdown region, if the voltage are given.

Q: 1. Plot the characteristic curve of the zener diode in the reverse-breakdown region from the results…

Q: Zener diode is designed to specifically work in which region without getting damaged? O Cut-off…

A: 1) zener diode is designed to work in breakdown region without getting damaged. 2) Voltage…

Q: Homework # 1: The manufacturer of a selected diode gives the rate of fall of the diode current di/dt…

A: As per our guidelines we are supposed to answer?️ only one question. Kindly repost other questions…

Q: Using diode equation, find the p-n junction Germanium diode current for a forward bias of 0.2 V at…

Q: Calculate the power rating of a zener diode connected across load working in reverse biased…

A: It is given that the current flowing through the Zener diode is twice the test current. So, the…

Q: A silicon diode has a reverse saturation current of 1.17 nA and forwards bias voltage of 0.4 V at a…

A: In this question we have to find the a) The ideality factor; b) The Thermal Voltage; c) The…

Q: Using diode equation, find the p-n junction diode current for a forward bias of 0.22V at room…

Q: Consider the circuit and parameters illustrated abova. Ifa darating factor of 12% is sugested then…

Q: Question 1 For the circuit shown below, given that V1 = 10V, V2 = 15V, R1 = 100, R2 = 60N, R3=10 n…

A: V1 = 10 V V2 = 15 V R1 = 10 OHM R2 = 60 OHM R3 = 10 ohm

Q: 1. A germanium diode has a forward current at 0.2 V forward bias is 0.1 mA at a temperature of 25°C,…

Q: Homework # 1: The manufacturer of a selected diode gives the rate of fall of the diode current di/dt…

A: In this question 1 , reverse recovery time is given and rate of fall of diode current is given..We…

Q: 0.48 0.97 4.45. 4.98 2.42 lo 20 25

Q: In the following circuit, assume diode forward voltage = 0.7 volt Plot the voltage across C. ( C =…

A: A diode bridge is a rendezvous of 4 diodes in a very electric circuit configuration that has the…

Q: A 1N4733 zener diode has a Zz of 7 ohms. Considering the data of the manufacturer's hona, the Vz =…

A: Here the circuit will be work as voltage regulator So, the output voltage will be VZ=VZO+RZIZ

Q: a, DESIGN THE NETWORK IN THE FIGURE, TO KEEP, "VL" at 12 V for a variation in load (IL) from 0 to…

A: According to question: a) As the load voltage has to kept at 12V, so to maintain this value of load…

Q: Q1/ For the circuit shown below, find Vo, Voz and the current through the silicone diode. Ge 8 A

Q: A PN-junction diode has a reverse saturation current rating of 20nA at 32C, if the forward voltage…

A: Given data, Reverse saturation Current IS=20 nA=20×10-9 A Forward Voltage drop VD=0.5 V

Q: Find the reverse saturation current of the p-n junction Germanium diode which is having forward bias…

Q: Using diode equation, find the p-n junction Germanium diode current for a forward bias of 0.2 V at…

Q: diode whose internal resistance is 20 ohms is to supply power to a 1000-ohm load from a 110V(rms)…

Q: For the given circuit below, if the diode is ideal.compute for the voltage across the load…

A: We need to find out voltage across diode for given circuit

Q: For the given circuit: if Vin = 200 V rms, R, = 2.2 k2, f = 60 Hz, answer the following questions…

A: Given Vin = 200 V RL =2.2 Kohm f= 60 Hz Practical diode VD= 0.7 V

Q: A 1N4738A zener diode has a ZZ of 4.5 Ω. Taking the data from the datasheet we have VZ = 8.2 V with…

A: Given Zz=4.5 ohmVz=8.2 VIzT=31 mA

Q: 4. (a) Design an ideal silicon p-n junction diode such that Jn = 24 A/cm? and Jp= 6 A/cm² at a…

A: An Ideal silicon p-n junction diode has following two important characteristics : Forward bias - Is…

Question

Calculate the reverse current of P-N diode, if a forward current of 10mA is flowing through it if supplied with 0.7V at 26.5°C room temperature. Assume ideality factor, n=2.

a. 3nA

b. 2.56nA

c 13.05nA

d. 2.5nA

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Step by step

Solved in 2 steps with 2 images

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Three Phase Controlled and Uncontrolled Rectifiers

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Similar questions

How is a solid-state diode tested? Explain.
4670V = VsR = 200kΩ C = 0.1μF Consider the circuit and parameters illustrated above. If a derating factor of 12% is sugested then calculate, 12) the maximum reverse voltage rating of the diodes; 13) the string efficiency of this arrangement; 14) the maximum difference in leakage current of the diodes; 15) the maximum difference in stored charge of the diodes.
Calculate the reverse current of P-N diode, if a forward current of 10mA is flowing through it if supplied with 0.7V at 26.5°C room temperature. Assume ideality factor, n=2.
When Vs=4290 Consider the circuit and parameters illustrated below.if a derating factor of 12% is suggested then calculate: 12) The maximum reverse voltage rating of the diodes. 13)The string efficiency of the arrangement 14)The maximum difference in leakage current of the diodes and the maximum difference in stored charge of the diodes.
In the practical diode model, which one does the diode current not depend on? a-Voltage applied to the diode b-Leakage current in reverse polarity c-Temperature d-Planck's constant
Consider a Zener diode in the figure given below where, V1 = 30 V. Determine the Zener current IZ if RZ = 100 Ω.
A silicon diode has a reverse saturation current of 1.17 nA and forwards bias voltage of 0.4 V at a temperature of 25°C, find a) The ideality factor; b) The Thermal Voltage; c) The forward bias current
In one graph, sketch the I-V curve for the forward bias. Forward Bias of PN Junction Diode:1. The Cut in Voltage or Knee Voltage of 1N4148 is _____________Volts.2. The Static Forward resistance of 1N4148 is __________________ .
Determine Q-point for the diodes in the circuit given below using the ideal diode model where, R1 = 12.2 kΩ, R2 = 16 kΩ, and R3 = 14 kΩ. (Note: Label the diodes from left to right.)
Find the value of dc and ac resistance of a Germanium junction diode if the temperature is 25 degree Celcius, Reverse Saturation Current is 20 microAmperes and applied voltage of 0.1V. a.) rDC= 75.6 ohms, rAC=11.2 ohms b.) rDC= 120.7 ohms, rAC= 28.4 ohms c.) rDC= 95.1 ohms, rAC=12.3 ohms d.) rDC= 109.2 ohms, rAC=26.3 ohms
Calculate the dynamic forward and reverse resistances of PN junction Germanium diode at a temperature of 300K, when the applied voltage is 0.25V and reverse saturation current is 10 µA
A germanium diode has a forward current at 0.2 V forward bias is 0.1 mA at a temperature of 25°C, find a. The ideality factor; b. The Thermal Voltage; c. The reverse saturation current