Consider a power transistor encapsulated in an aluminum case that is attached at its base to a square aluminum plate of thermal conductivity k= 240W/m.K, thickness L= 6mm, and width W= 20mm. The case is joined to the plate by screws that maintain a contact pressure of 1 bar, and the back surface of the plate transfers heat by natural convection and radiation to ambient air and large surroundings at T∞ =Tsur -25°C. The surface has an emissivity of ε=0.9, and the convection coefficient is h=4 W/m².K. The case is completely enclosed such that heat transfer may be assumed to occur exclusively through the base plate. a) If the air-filled aluminum-to-aluminum interface is characterized by an area of A₁=2×10-4 m² and contact resistance of R+c= 1.375 K/W, what is the maximum allowable power dissipation if the surface temperature of the case, Ts,c, is not to exceed 85°C? S,C' Transistor case Ts. Pelec S,C' Enclosure W Isur Base plate, (k,ε) Interface, Ac Air Th 801 b) How much should the h be to enhance power dissipation to 1 Watt?

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Chapter2: Steady Heat Conduction
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Consider a power transistor encapsulated in an aluminum
case that is attached at its base to a square aluminum
plate of thermal conductivity k= 240W/m.K, thickness
L= 6mm, and width W= 20mm. The case is joined to the
plate by screws that maintain a contact pressure of 1
bar, and the back surface of the plate transfers heat
by natural convection and radiation to ambient air and
large surroundings at T∞ =Tsur -25°C. The surface has an
emissivity of ε=0.9, and the convection coefficient is
h=4 W/m².K. The case is completely enclosed such that
heat transfer may be assumed to occur exclusively
through the base plate.
a) If the air-filled aluminum-to-aluminum interface is
characterized by an area of A₁=2×10-4 m² and contact
resistance of R+c= 1.375 K/W, what is the maximum
allowable power dissipation if the surface temperature
of the case, Ts,c, is not to exceed 85°C?
S,C'
Transistor
case
Ts. Pelec
S,C'
Enclosure
W
Isur
Base plate, (k,ε)
Interface, Ac
Air
Th
801
b) How much should the h be to
enhance power dissipation to 1 Watt?
Transcribed Image Text:Consider a power transistor encapsulated in an aluminum case that is attached at its base to a square aluminum plate of thermal conductivity k= 240W/m.K, thickness L= 6mm, and width W= 20mm. The case is joined to the plate by screws that maintain a contact pressure of 1 bar, and the back surface of the plate transfers heat by natural convection and radiation to ambient air and large surroundings at T∞ =Tsur -25°C. The surface has an emissivity of ε=0.9, and the convection coefficient is h=4 W/m².K. The case is completely enclosed such that heat transfer may be assumed to occur exclusively through the base plate. a) If the air-filled aluminum-to-aluminum interface is characterized by an area of A₁=2×10-4 m² and contact resistance of R+c= 1.375 K/W, what is the maximum allowable power dissipation if the surface temperature of the case, Ts,c, is not to exceed 85°C? S,C' Transistor case Ts. Pelec S,C' Enclosure W Isur Base plate, (k,ε) Interface, Ac Air Th 801 b) How much should the h be to enhance power dissipation to 1 Watt?
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