Consider the following statements about transistors and choose the correct statements 1. The base of transistor is much thicker than the emitter while the collector is wider than both. 2. The emitter is heavily doped so that it can eject large number of carriers into the base. 3. The transistor has two pn junctions i.e., it is like two diodes 4. The resistance of collector diode is very high as compared to .emitter diode. 5. The emitter diode is always forward biased and collector diode is always reverse biased.

Consider the following statements about transistors and choose the correct statements 1. The base of transistor is much thicker than the emitter while the collector is wider than both. 2. The emitter is heavily doped so that it can eject large number of carriers into the base. 3. The transistor has two pn junctions i.e., it is like two diodes 4. The resistance of collector diode is very high as compared to .emitter diode. 5. The emitter diode is always forward biased and collector diode is always reverse biased.

Glencoe Physics: Principles and Problems, Student Edition

1st Edition

ISBN:9780078807213

Author:Paul W. Zitzewitz

Publisher:Paul W. Zitzewitz

Chapter29: Solid-state Electronics

Section: Chapter Questions

Problem 45A

See similar textbooks

Similar questions

Consider an approximate model of the epitaxial resistivity in a silicon power transistor:A pyramid structure with a square base has a resistor in every edge of the structure.The structure of the model is shown in Figure 3 attached. (a) Based on the description above, draw the relevant structure and include relevant resistors in your diagram.(b) Suppose the value of all resistors is R Ω, calculate the total resistance viewing from any of the a-x pairs.(c) Is the total resistance similar for all possible vertex pairs? Verify your statement above by including relevant calculation proof.
Q2. Transistors are manufactured by doping semiconductors. The diffusion coefficient of phosphorus in Si is D = 6.5 x 10-11 mm2/s at a temperature of 950°C. Assume the source provides a surface concentration of 1020 atoms/cm3 and the diffusion time is one hour. Assume that the silicon wafer initially contains no phosphorus. Calculate the depth at which the concentration of phosphorus will be 1018 atoms/cm3.
1. What happens to the thickness of the depletion region in a PN junction when an external voltage is applied to a forward bias diode? 2. When “P” and “N” type semiconductor pieces are brought into close contact, free electrons from the “N” piece will rush over to fill holes in the “P” piece, creating a zone on both sides of the contact region devoid of charge carriers. What is this zone called, and what are its electrical characteristics 3. Is this diode forward-biased or reverse biased? Show soultion please, thanks.
a. What is meant by N-type and P-type semiconductor? Explain with diagram. b. With diagram, explain the effect of reverse bias on the depletion region.
Briefly explain how depletion region is formed in a PN diode when there is no bias applied. When the PN junction is biased negatively, how does the depletion width changes cause the current flow between the regions. You may add relevant diagrams to support your answer.
How does a semiconductor vary from a conductor and an insulator, and what does it do? In your explanation, including a chart.
Photon energy of the light with a given wavelength could be calculated by the following equation (attached in this QnA post):*hint: wavelength of light is not in SI unit, unit conversion is needed. What is the band gap of the semiconductor, if it can only be excited by the light with wavelength equal to or smaller than 500 nm?*hint: the photon energy needs to be greater or equal to the band gap, in order to excite the semiconductor
Use Gauss's Law and basic surface and volume integrals to determine the electric field of a cylindrical semiconductor (radius=2 m, length = 1 m. permittivity or epsilon = 3 epsilon free space ) that has a net charge of 20C. What is the electric field at all points in space caused by this charge distribution? 1.Inside the semi conductor. 2.Outside the semi-conductor in the r direction. 3.Outside the semi conductor in the l direction. 4.Outside the semiconductor in the Theta direction. could you type answers out.
I need the procedure in detail of this experiment : "p-n junction diode characteristics"
write at least 6 points on the effect of temperature on semiconductor devices?
What is PN Junction diod? Explain the formation of depletion region in PN Junction diode.
Why does the horizontal Line in the graph in Figure 9.12 suddenly stop at the Fermi energy? Figure 9.12 (a) Density of state for a free electron gas; (b) probability that a state is occupied at T = 0 K; (c) density if occupied states at T = 0 k.