5) Below the temperature dependence of charge carrier concentrations of intrinsic semiconductors Ge and Si are given. Based on this graph a) determine the band gaps of these materials, b) determine the the energy difference between the Fermi Energy and the conduction band and c) determine the electrical conductivities of Ge and Si at room temperature. Assume electron and hole mobilities are 0.8 and 0.01 V/cm.sec, respectively, for both materials 1028 1026 1024 Ge 1022 Si 1020 1018 1016 1014 1012 1010 108 106 200 400 600 800 1000 1200 1400 1600 1800 T (K) Intrinsic carrier concentration (m¬3)

5) Below the temperature dependence of charge carrier concentrations of intrinsic semiconductors Ge and Si are given. Based on this graph a) determine the band gaps of these materials, b) determine the the energy difference between the Fermi Energy and the conduction band and c) determine the electrical conductivities of Ge and Si at room temperature. Assume electron and hole mobilities are 0.8 and 0.01 V/cm.sec, respectively, for both materials 1028 1026 1024 Ge 1022 Si 1020 1018 1016 1014 1012 1010 108 106 200 400 600 800 1000 1200 1400 1600 1800 T (K) Intrinsic carrier concentration (m¬3)

Glencoe Physics: Principles and Problems, Student Edition

1st Edition

ISBN:9780078807213

Author:Paul W. Zitzewitz

Publisher:Paul W. Zitzewitz

Chapter29: Solid-state Electronics

Section29.1: Conduction In Solids

Problem 24SSC

See similar textbooks

Similar questions

Why does the horizontal Line in the graph in Figure 9.12 suddenly stop at the Fermi energy? Figure 9.12 (a) Density of state for a free electron gas; (b) probability that a state is occupied at T = 0 K; (c) density if occupied states at T = 0 k.
A p-n diode has a reverse saturation current 1.44108A . It is forward biased so that it has a current of 6.78101A moving through it. What bias voltage is being applied if the temperature is 300 K?
The NaCl crystal structure is FCC. The equilibrium spacing is r0=0.282nm. If each ion occupies a cubic 3 volume of r03 , estimate the distance between “nearest neighbor” Na+ ions (center-to-center)?
A silicon p-n junction consists of a p-type region containing 3x1016 cm-3 acceptors and an n- type region containing also 1017 cm-3 donors. a. Calculate the density of electrons and holes in both p-type and n-type regions under thermal equilibrium at room temperature. b. Calculate the built-in potential of the p-n junction? c. Calculate the width of the depletion layer under a reverse bias of 1.0 V. d. Based on c, calculate the junction capacitance. Note that the junction cross-session area is 1.2 mm2.
Q2. Transistors are manufactured by doping semiconductors. The diffusion coefficient of phosphorus in Si is D = 6.5 x 10-11 mm2/s at a temperature of 950°C. Assume the source provides a surface concentration of 1020 atoms/cm3 and the diffusion time is one hour. Assume that the silicon wafer initially contains no phosphorus. Calculate the depth at which the concentration of phosphorus will be 1018 atoms/cm3.
Determine the temperature at which there is a 2 percent that an energy state 0.3 eV below the Fermi level is empty?
Assume that Fermi energy level is 0.33eV above valance band energy. Calculate the electrons concentration (in Tera electrons/m) for the intrinsic silicon at T-400K.
Why is electrical conductivity in semiconductors more temperature-dependent than electrical conductivity in metals? Explain.
how does a semiconductor behaves at 0K? Explain your answer.
1. What happens to the thickness of the depletion region in a PN junction when an external voltage is applied to a forward bias diode? 2. When “P” and “N” type semiconductor pieces are brought into close contact, free electrons from the “N” piece will rush over to fill holes in the “P” piece, creating a zone on both sides of the contact region devoid of charge carriers. What is this zone called, and what are its electrical characteristics 3. Is this diode forward-biased or reverse biased? Show soultion please, thanks.
Q1:- (a) Find the probability that an energy level is empty of an electron if the state is below the Fermi level by 6kT. (b) Is the product of the two types of carriers in doped semiconductor remains constant at a given temperature? Why?
Compare the resistance of a p-n junction diode connected in forward bias to its resistance when connected in reverse bias? Use forward and reverse bias circuits to explain? How it can be used in electrical circuits