d) In Figure 3.3 shows the circuit diagram of a typical n-channel JFET common source amplifier. If ac input impedance of this amplifier is RGG = 1.XY Mohm, VGG = 1. XYV, RD= 1.5 x Rs and VDD = 16 V. Determine the value of Rs to set the Q-point to VGs = -1.5V and ID = 3.5 mA. What is the value of VDs at the Q-point? Sketch the amplifier's small signal equivalent circuit model. If the JFET transconductance at this bias point (Q-point) is gm = 2.XY MS and go = 0.01 mS, what is the ac open circuit voltage gain Av and the ac short circuit current gain A₁ of this amplifier. + VDD x=1 y=7 RG1 Vin Cin HT lin RG2 OF VG RD ¡VD Cout Rs Figure 3.3 +1 th Vout Cs lout

d) In Figure 3.3 shows the circuit diagram of a typical n-channel JFET common source amplifier. If ac input impedance of this amplifier is RGG = 1.XY Mohm, VGG = 1. XYV, RD= 1.5 x Rs and VDD = 16 V. Determine the value of Rs to set the Q-point to VGs = -1.5V and ID = 3.5 mA. What is the value of VDs at the Q-point? Sketch the amplifier's small signal equivalent circuit model. If the JFET transconductance at this bias point (Q-point) is gm = 2.XY MS and go = 0.01 mS, what is the ac open circuit voltage gain Av and the ac short circuit current gain A₁ of this amplifier. + VDD x=1 y=7 RG1 Vin Cin HT lin RG2 OF VG RD ¡VD Cout Rs Figure 3.3 +1 th Vout Cs lout

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

(a) What is the output current IO in the circuitshown if −VEE = −10 V andR = 20 ohm? Assume that the MOSFET is saturated.(b) What is the minimum voltage VDDneeded to saturate the MOSFET if VTN = 2.5 Vand K'n = 0.25 A/V2. (c) What must be the powerdissipation ratings of resistor R and the FET.
‏( b ) For the Junction Field Effect Transistor ( JFET ) shown in Figure Q1 ( b ) below , given that maximum current Ipss = 10 mA , pinch - off voltage Vp = -5 V , R D= 2 ka , source voltage and resistance are VDD= 12 V and Rs = 5 kn , respectively , solve to determine following (i) The quiescent voltage between the gate and source VGSQ . (ii) The quiescent drain current IDQ
For the Enhancement-type MOSFET in following figure, 1.Determine IDQ and VGSQ
Subject:Electronics Engineering With a neat circuit diagram, explain the Voltage Divider Bias circuit using approximate analysis. Also derive the equation of stability (S) for Voltage Divider Bias circuit.
Draw the dc and ac equivalent circuits (menu steps 1 and 3) for the common-source amplifier as shown .
1. Use the figure below to solve following questions (a) Solve the following dc quantitiesi. VB(Q1)ii. VE(Q1)iii. IE(Q1)iv. VC(Q1)v. VB(Q2)vi. VE(Q2)vii. IE(Q2)viii. VC(Q2)(b) Suppose that the emitter follower is omitted and the output from thecollector of Q1 is capacitively coupled to the 250Ω load, RL. What isthe output voltage across the 250Ω load?
Figure Q3 shows a single stage transistor amplifier driven by a signal voltage source Vi a) Determine the operating (Q) point if B = 100 and VBE = O.7 V. b) Using the re model, draw the AC equivalent circuit and determine the: i) input impedance, output impedance, ii) voltage gain AVs iii) the current gain, Ai. Assume ro = ∞
What is the voltage value Vgs for the n-channel MOSFET given in the figure? (VT=2V, K=0.4mA/V^2, VDD=5V, RD=RS=1K)
5- a-) Define the MOSFET in the figure, explain by drawing its input and output circuit characteristics.b-) Since k=0.1 mA/V2, VGS=5V and VT=2.5V for this MOSFET, find the VDS voltage using the circuit.
2) Using the electrical characteristics data provided for 2N7000G n-channel mosfet, determine the following: 5M i) the K value for the mosfet. ii) Sketch the Transfer characteristics show all your calculation steps clearly.
In the circuit given in the figure, R₁ = 850kQ, R₂ = 350kQ, Rs = 4kQ, RL = 4kQ,VDD = 10V, VSGQ = 2.084V and transistor parameters VTP = -1.2V,kp = 40μA/V², W/L = 80 andIt is given as λ= 0.05V-¹. a) Find the gm and ro small sign parameters of the transistor.b) Draw the small sign equivalent of the circuit. c) Find the low signal voltage gain of the circuit AV = V0/Vi.
in the circuit given in the figure , VDD = 20 V ,Rs= 1 kohm , VGSQ= -2.6 v, IDQ = 2.6 mA.the transistor specifically has values of IDSS = 8mA , Vp= -6 V , and gos =25 µS. what should be the RD resistance for the output voltage to be -24.85 mV when an AC voltage of 12 mV is applied to the transistor input ? Options: a) 3.3 kohm b) 4.2 kohm c) 4.5 kohm d) 3.6 kohm e) 3.9 kohm